 |  | | |
| PartNumber | MJD44H11-1G | MJD44H11-1 | MJD44H11-1G/MJD45H11-1G |
| Description | Bipolar Transistors - BJT 8A 80V 20W NPN | Bipolar Junction Transistor, NPN Type, TO-251 | |
| Manufacturer | ON Semiconductor | ON | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | DPAK-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 5 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1 V | 1 V | - |
| Maximum DC Collector Current | 8 A | 8 A | - |
| Gain Bandwidth Product fT | 85 MHz | 85 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MJD44H11 | MJD44H11 | - |
| Height | 6.35 mm | - | - |
| Length | 6.73 mm | - | - |
| Packaging | Tube | Tube | - |
| Width | 2.38 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 8 A | 8 A | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.012346 oz | 0.012346 oz | - |
| Package Case | - | DPAK-3 | - |
| Pd Power Dissipation | - | 20 W | - |
| Collector Emitter Voltage VCEO Max | - | 80 V | - |
| Collector Base Voltage VCBO | - | 5 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| DC Collector Base Gain hfe Min | - | 60 | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| MJD44H11-1G | Bipolar Transistors - BJT 8A 80V 20W NPN | ||
| MJD44H11-1 | Bipolar Junction Transistor, NPN Type, TO-251 | ||
| MJD44H11-1G/MJD45H11-1G | 全新原裝 | ||
ON Semiconductor |
MJD44H11-1G | Bipolar Transistors - BJT 8A 80V 20W NPN |