IPI65R150CFDXKSA1

IPI65R150CFDXKSA1
Mfr. #:
IPI65R150CFDXKSA1
製造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
生命週期:
製造商新產品
數據表:
IPI65R150CFDXKSA1 數據表
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ECAD Model:
產品屬性
屬性值
製造商
英飛凌科技
產品分類
晶體管 - FET、MOSFET - 單
系列
IPI65R150
打包
管子
部分別名
IPI65R150CFD IPI65R150CFDXK SP000907028
單位重量
0.073511 oz
商品名
酷摩
包裝盒
TO-262-3
技術
通道數
1 Channel
晶體管型
1 N-Channel
Id 連續漏極電流
72 A
Vds-漏-源-擊穿電壓
700 V
Rds-On-Drain-Source-Resistance
150 mOhms
晶體管極性
N通道
Tags
IPI65R1, IPI65, IPI6, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-262
***i-Key
MOSFET N-CH 650V 22.4A TO-262
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
型號 製造商 描述 庫存 價格
IPI65R150CFDXKSA1
DISTI # IPI65R150CFDXKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 22.4A TO-262
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
  • 500:$2.2182
IPI65R150CFDXKSA1
DISTI # SP000907028
Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-262 (Alt: SP000907028)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.5900
  • 10:€1.4900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.3900
IPI65R150CFDXKSA1Infineon Technologies AGPower Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
13500
  • 1000:$1.5900
  • 500:$1.6800
  • 100:$1.7500
  • 25:$1.8200
  • 1:$1.9600
IPI65R150CFDXKSA1
DISTI # 726-IPI65R150CFDXKSA
Infineon Technologies AGMOSFET N-Ch 700V 72A I2PAK-3
RoHS: Compliant
0
    圖片 型號 描述
    IPI65R150CFD

    Mfr.#: IPI65R150CFD

    OMO.#: OMO-IPI65R150CFD-1190

    Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    IPI65R150CFDXKSA1

    Mfr.#: IPI65R150CFDXKSA1

    OMO.#: OMO-IPI65R150CFDXKSA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
    可用性
    庫存:
    Available
    訂購:
    3500
    輸入數量:
    IPI65R150CFDXKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$2.24
    US$2.24
    10
    US$2.12
    US$21.23
    100
    US$2.01
    US$201.15
    500
    US$1.90
    US$949.90
    1000
    US$1.79
    US$1 788.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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