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SCT2H12NYTB

SCT2H12NYTB
Mfr. #:
SCT2H12NYTB
製造商:
Rohm Semiconductor
描述:
MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide
生命週期:
製造商新產品
數據表:
SCT2H12NYTB 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SCT2H12NYTB 更多信息
產品屬性
屬性值
製造商：
羅姆半導體
產品分類：
MOSFET
RoHS：
Y
技術：
碳化矽
安裝方式：
貼片/貼片
包裝/案例：
TO-268-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
1700 V
Id - 連續漏極電流：
4 A
Rds On - 漏源電阻：
1.15 Ohms
Vgs th - 柵源閾值電壓：
1.6 V
Vgs - 柵源電壓：
22 V
Qg - 門電荷：
14 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
44 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
系列：
SCT2x
晶體管類型：
1 N-Channel
品牌：
羅姆半導體
正向跨導 - 最小值：
400 mS
秋季時間：
74 ns
產品類別：
MOSFET
上升時間：
21 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
35 ns
典型的開啟延遲時間：
16 ns
第 # 部分別名：
SCT2H12NY
單位重量：
0.141096 oz
Tags
SCT2H, SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, SiC N-Channel MOSFET, 4 A, 1700 V, 2 + Tab-Pin TO-268 ROHM SCT2H12NYTB
***ure Electronics
N-Channel 1700 V 1.5 Ohm Surface Mount SiC Power Mosfet - TO-268-2
***ical
Trans MOSFET N-CH SiC 1.7KV 4A 3-Pin(2+Tab) TO-268L T/R
***et
Trans MOSFET N-CH 1700V 4A 3-Pin TO-268 Emboss T/R
***ronik
SiC-N 1700V 4A 1150mOhm TO268
***i-Key
1700V 1.2 OHM 4A SIC FET
***
N-CH SIC PWR MOSF 1.7KV
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:1.7Kv; On Resistance Rds(On):1.15Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:44W; No. Of Pins:2Pins Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 1.7KV, 4A, TO-268; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):1.15ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:44W; Transistor Case Style:TO-268; No. of Pins:2Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 1,7KV, 4A, TO-268; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4A; Tensione Drain Source Vds:1.7kV; Resistenza di Attivazione Rds(on):1.15ohm; Tensione Vgs di Misura Rds(on):18V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:44W; Modello Case Transistor:TO-268; No. di Pin:2Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
型號 製造商 描述 庫存 價格
SCT2H12NYTB
DISTI # SCT2H12NYTBCT-ND		ROHM Semiconductor1700V 1.2 OHM 4A SIC FET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2293In Stock
  • 100:$3.9969
  • 25:$4.6120
  • 10:$4.8780
  • 1:$5.4300
SCT2H12NYTB
DISTI # SCT2H12NYTBDKR-ND		ROHM Semiconductor1700V 1.2 OHM 4A SIC FET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2293In Stock
  • 100:$3.9969
  • 25:$4.6120
  • 10:$4.8780
  • 1:$5.4300
SCT2H12NYTB
DISTI # SCT2H12NYTBTR-ND		ROHM Semiconductor1700V 1.2 OHM 4A SIC FET
RoHS: Compliant
Min Qty: 400
Container: Tape & Reel (TR)		2000In Stock
  • 2000:$2.6467
  • 1200:$2.7860
  • 800:$3.3034
  • 400:$3.6815
SCT2H12NYTB
DISTI # SCT2H12NYTB		ROHM SemiconductorTrans MOSFET N-CH 1700V 4A 3-Pin TO-268 Emboss T/R - Tape and Reel (Alt: SCT2H12NYTB)
RoHS: Compliant
Min Qty: 400
Container: Reel		Americas - 0
  • 4000:$2.4900
  • 2400:$2.5900
  • 1600:$2.6900
  • 800:$2.8900
  • 400:$3.0900
SCT2H12NYTB
DISTI # SCT2H12NYTB		ROHM SemiconductorTrans MOSFET N-CH 1700V 4A 3-Pin TO-268 Emboss T/R (Alt: SCT2H12NYTB)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€3.2900
  • 500:€3.5900
  • 100:€3.6900
  • 50:€3.8900
  • 25:€3.9900
  • 10:€4.1900
  • 1:€4.5900
SCT2H12NYTB
DISTI # 18AC7649		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 4A, TO-268,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes108
  • 250:$3.7700
  • 100:$3.9700
  • 50:$4.1800
  • 25:$4.4400
  • 10:$4.6300
  • 1:$5.3100
SCT2H12NYTB.
DISTI # 30AC0012		ROHM SemiconductorTransistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:44W,No. of Pins:2Pins RoHS Compliant: Yes800
  • 4000:$2.4900
  • 2400:$2.5900
  • 1600:$2.6900
  • 800:$2.8900
  • 1:$3.0900
SCT2H12NYTB
DISTI # 755-SCT2H12NYTB		ROHM SemiconductorMOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide
RoHS: Compliant		2478
  • 1:$5.2600
  • 10:$4.4700
  • 100:$3.8800
  • 250:$3.6800
  • 400:$3.3000
  • 800:$2.7800
  • 2400:$2.6400
SCT2H12NYTB
DISTI # 1501510		ROHM SemiconductorMOSFET N-CH 1700V 4A SIC TO-268-2L, PK2
  • 100:£3.3600
  • 24:£3.5850
  • 12:£3.7550
  • 6:£4.0350
  • 2:£4.7050
SCT2H12NYTBROHM SemiconductorPOWER FIELD-EFFECT TRANSISTOR12
  • 13:$5.5200
  • 5:$6.0720
  • 1:$8.2800
SCT2H12NYTB
DISTI # TMOSP12912		ROHM SemiconductorSiC-N 1700V 4A 1150mOhm TO268
RoHS: Compliant		Stock DE - 1200Stock HK - 0Stock US - 0
  • 400:$5.6900
  • 800:$5.0400
SCT2H12NYTBROHM SemiconductorRoHS(ship within 1day)16
  • 1:$5.4400
  • 10:$4.0800
  • 50:$3.6000
  • 100:$3.0700
  • 500:$2.8600
  • 1000:$2.7600
SCT2H12NYTBROHM SemiconductorMOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide
RoHS: Compliant		Americas - 1600
    SCT2H12NYTB
    DISTI # 2762593    		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 4A, TO-268126
    • 100:£3.2200
    • 50:£3.3100
    • 10:£3.4100
    • 5:£4.0100
    • 1:£4.4500
    SCT2H12NYTB
    DISTI # 2762593    		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 4A, TO-268
    RoHS: Compliant    		103
    • 25:$6.9600
    • 10:$7.3600
    • 1:$8.1800
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    可用性
    庫存:
    Available
    訂購:
    1985
    輸入數量:
    SCT2H12NYTB的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$5.26
    US$5.26
    10
    US$4.47
    US$44.70
    100
    US$3.88
    US$388.00
    250
    US$3.68
    US$920.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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