SCT3060ALGC11

Mfr. #:: SCT3060ALGC11
製造商:: Rohm Semiconductor
描述:: MOSFET NCH 650V 39A TO247N
生命週期:: 製造商新產品
數據表:: SCT3060ALGC11 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: SCT3060ALGC11 更多信息

產品屬性
屬性值

Tags: SCT306, SCT30, SCT3, SCT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SCT3060ALGC11 描述

***ure Electronics: SCT3060AL Series 650 V 39 A 78 mOhm N-Channel SiC Power Mosfet - TO-247N

***ical: Trans MOSFET N-CH SiC 650V 39A 3-Pin(3+Tab) TO-247N Tube

***ark: Mosfet Configuration:single; Transistor Polarity:n Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.078Ohm; No. Of Pins:3Pins; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V Rohs Compliant: Yes

SCT3060ALGC11 更多信息

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

SCT3x 3rd Generation SiC Trench MOSFETs: ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.

N-Channel SiC Power MOSFETs: ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.

Industrial Product Solutions: ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.

Market price

型號	製造商	描述	庫存	價格
SCT3060ALGC11 DISTI # SCT3060ALGC11-ND	ROHM Semiconductor	MOSFET NCH 650V 39A TO247N RoHS: Compliant Min Qty: 1 Container: Tube	1511In Stock	510:$7.7720 120:$8.7368 30:$9.9160 10:$10.3450 1:$11.2600
SCT3060ALGC11 DISTI # SCT3060ALGC11	ROHM Semiconductor	N-CHANNEL SILICON CARBIDE POWER MOSFET 650V/39A - Rail/Tube (Alt: SCT3060ALGC11) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 450	4500:$6.7900 2250:$6.9900 1350:$7.3900 900:$7.8900 450:$8.3900
SCT3060ALGC11 DISTI # SCT3060ALGC11	ROHM Semiconductor	N-CHANNEL SILICON CARBIDE POWER MOSFET 650V/39A (Alt: SCT3060ALGC11) RoHS: Compliant Min Qty: 30	Asia - 0
SCT3060ALGC11 DISTI # SCT3060ALGC11	ROHM Semiconductor	N-CHANNEL SILICON CARBIDE POWER MOSFET 650V/39A (Alt: SCT3060ALGC11) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€9.9900 500:€10.7900 100:€11.1900 50:€11.5900 25:€11.9900 10:€12.5900 1:€13.6900
SCT3060ALGC11 DISTI # 05AC9463	ROHM Semiconductor	MOSFET, N-CH, 650V, 39A, TO-247N,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,Power RoHS Compliant: Yes	75	500:$11.7000 250:$12.1000 100:$13.7600 50:$14.6100 25:$16.1800 10:$16.6600 1:$17.8200
SCT3060ALGC11. DISTI # 30AC0014	ROHM Semiconductor	Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:650V,On Resistance Rds(on):78mohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,Power Dissipation Pd:165W,No. of Pins:3Pins RoHS Compliant: Yes	450	500:$11.7000 250:$12.1000 100:$13.7600 50:$14.6100 25:$16.1800 10:$16.6600 1:$17.8200
SCT3060ALGC11 DISTI # 755-SCT3060ALGC11	ROHM Semiconductor	MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS RoHS: Compliant	1408	1:$11.2600 10:$10.3500 25:$9.9200 100:$8.7400 250:$8.3100 500:$7.7800 1000:$7.1300
SCT3060ALGC11	ROHM Semiconductor	SCT3060AL Series 650 V 39 A 78 mOhm N-Channel SiC Power Mosfet - TO-247N RoHS: Compliant	1110Tube	2:$10.7000 10:$9.1700 25:$8.6300 50:$8.2400 100:$7.8700
SCT3060ALGC11 DISTI # 1501454	ROHM Semiconductor	MOSFET N-CHANNEL 39A 650V SIC TO-247, EA	4	200:£18.7200 100:£18.9600 50:£19.7300 10:£20.2600 1:£21.1400
SCT3060ALGC11	ROHM Semiconductor		412	298:$12.6450 137:$13.4880 1:$18.9675
SCT3060ALGC11 DISTI # 2678785	ROHM Semiconductor	MOSFET, N-CH, 650V, 39A, TO-247N RoHS: Compliant	59	250:$21.1600 100:$21.8900 25:$22.6600 10:$23.9500 1:$24.4100
SCT3060ALGC11 DISTI # 2678785	ROHM Semiconductor	MOSFET, N-CH, 650V, 39A, TO-247N	31	100:£9.2600 50:£9.3700 10:£9.4800 5:£9.5900 1:£9.7000
SCT3060ALGC11 DISTI # XSFP00000063252	ROHM SEMICONDUCTOR	RoHS: Compliant	900 in Stock0 on Order	900:$14.2700 30:$15.2900
SCT3060ALGC11 DISTI # TMOS1515	ROHM Semiconductor	SiC-N 650V 60mOhm 39A TO247N RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	450:$13.0500
SCT3060ALGC11 DISTI # SCT3060ALGC11	ROHM Semiconductor	SiC-N-Ch 650V 39A 165W 0,078R TO247 RoHS: Compliant	436	1:€15.1500 5:€13.1500 10:€12.1500 30:€11.7500
SCT3060ALGC11	ROHM Semiconductor	MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS RoHS: Compliant	Americas - 450	30:$8.6500 2010:$8.1700 5010:$8.0000 10020:$7.8700
SCT3060ALGC11	ROHM Semiconductor	RoHS(ship within 1day)	65	1:$11.4100 10:$9.3800 50:$9.0000 100:$8.7500 500:$8.5600 1000:$8.4300

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圖片	型號	描述
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	Mfr.#: SCT3060ALGC11 OMO.#: OMO-SCT3060ALGC11	MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS
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