FDFME3N311ZT

Mfr. #:: FDFME3N311ZT
製造商:: ON Semiconductor
描述:: MOSFET N-CH 30V 1.8A 6MICROFET
生命週期:: 製造商新產品
數據表:: FDFME3N311ZT 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 仙童

產品分類: FET - 單

打包: 捲軸

單位重量: 0.000889 oz

安裝方式: 貼片/貼片

包裝盒: microFET-6

技術: 矽

通道數: 1 Channel

配置: 單用肖特基二極管

晶體管型: 1 N-Channel

鈀功耗: 1.1 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 2.8 ns

上升時間: 16 ns

VGS-柵極-源極-電壓: 12 V

Id 連續漏極電流: 1.6 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 299 mOhms

晶體管極性: N通道

典型關斷延遲時間: 35 ns

典型開啟延遲時間: 12 ns

正向跨導最小值: 2.8 S

通道模式: 增強

Tags: FDFME, FDFM, FDF

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FDFME3N311ZT 描述

***Semiconductor: Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.299ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:0.5W ;RoHS Compliant: Yes

***rchild Semiconductor: This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Market price

型號	製造商	描述	庫存	價格
FDFME3N311ZT DISTI # FDFME3N311ZTTR-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call	5000:$0.2525
FDFME3N311ZT DISTI # FDFME3N311ZTCT-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDFME3N311ZT DISTI # FDFME3N311ZTDKR-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDFME3N311ZT DISTI # FDFME3N311ZT	ON Semiconductor	Trans MOSFET N-CH 30V 1.8A 6-Pin MicroFET T/R (Alt: FDFME3N311ZT) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.4469 10000:€0.3479 20000:€0.2889 30000:€0.2429 50000:€0.2249
FDFME3N311ZT DISTI # 73R3644	ON Semiconductor	MOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:500mW RoHS Compliant: Yes	0	1:$0.6400 25:$0.5270 50:$0.4340 100:$0.3400 250:$0.3170 500:$0.2950 1000:$0.2720
FDFME3N311ZT DISTI # 64R3000	ON Semiconductor	MOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes	0	1:$0.2860 5000:$0.2840 10000:$0.2500 25000:$0.2250 50000:$0.2130
FDFME3N311ZT	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	60662	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
FDFME3N311ZT DISTI # 1813536	ON Semiconductor	MOSFET Transistor RoHS: Compliant	0	5000:£0.2410
FDFME3N311ZT DISTI # 1813536	ON Semiconductor	MOSFET Transistor RoHS: Compliant	0	5000:$0.9780