IPD60R1K5CEATMA1

Mfr. #:: IPD60R1K5CEATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-Ch 600V 3.1A DPAK-2
生命週期:: 製造商新產品
數據表:: IPD60R1K5CEATMA1 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-252-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 3.1 A

Rds On - 漏源電阻：: 1.5 Ohms

Vgs th - 柵源閾值電壓：: 2.5 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 9.4 nC

最低工作溫度：: - 40 C

最高工作溫度：: + 150 C

Pd - 功耗：: 28 W

配置：: 單身的

頻道模式：: 增強

商品名：: 酷摩

打包：: 捲軸

高度：: 2.3 mm

長度：: 6.5 mm

晶體管類型：: 1 N-Channel

寬度：: 6.22 mm

品牌：: 英飛凌科技

秋季時間：: 20 ns

產品類別：: MOSFET

上升時間：: 7 ns

出廠包裝數量：: 2500

子類別：: MOSFET

典型關斷延遲時間：: 40 ns

典型的開啟延遲時間：: 8 ns

第 # 部分別名：: IPD60R1K5CEATMA1 SP001276036

單位重量：: 0.139332 oz

Tags: IPD60R1K5, IPD60R1K, IPD60R1, IPD60R, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD60R1K5CEATMA1 描述

***ure Electronics: N-Channel 600 V 3.1 A 1500 mO 9.4 nC CoolMOS CE Power Transistor - DPAK

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.047uF 25volt X7R +/-5%

***ical: Trans MOSFET N-CH 800V 3.1A 3-Pin(2+Tab) DPAK T/R

***et: Trans MOSFET N-CH 650V 3.1A 3-Pin TO-252 T/R

*** Electronic Components: IGBT Transistors MOSFET N-Ch 650V 3.1A DPAK-2

***ineon SCT: Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252 T/R, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 600V, 3.2A, TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.26ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ical: Trans MOSFET N-CH 650V 2.4A 3-Pin(2+Tab) TO-252 T/R

*** Stop Electro: Power Field-Effect Transistor, 2.4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 600V, 2.4A, TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ical: Trans MOSFET N-CH 650V 2.8A Automotive 3-Pin(2+Tab) DPAK T/R

***et: Trans MOSFET N-CH 650(Min)V 2.8A 3-Pin TO-252 T/R

***ineon SCT: Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO252-3, RoHS

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

***et Europe: Trans MOSFET N-CH 500V 3A 3-Pin DPAK

***S: French Electronic Distributor since 1988

***enic: TO-252-3 MOSFETs ROHS

*** Europe: N-CH SINGLE 500V TO252

***el Nordic: Contact for details

***ark: N-CHANNEL 500V

***et: TRANS MOSFET N-CH 500V 2.5A 3PIN DPAK

***ser: MOSFETs 500V, N-CHA NNEL MOSFET

***inecomponents.com: 500V N-Channel Advanced QFET® C-series

***i-Key: MOSFET N-CH 500V 2.6A DPAK

***-Wing Technology: POWER FIELD-EFFECT TRANSISTOR

***ser: MOSFETs 500V N-Channel QFET

Market price

型號	製造商	描述	庫存	價格
IPD60R1K5CEATMA1 DISTI # IPD60R1K5CEATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V TO-252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	27In Stock	1000:$0.2483 500:$0.3213 100:$0.4089 10:$0.5480 1:$0.6400
IPD60R1K5CEATMA1 DISTI # IPD60R1K5CEATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V TO-252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	27In Stock	1000:$0.2483 500:$0.3213 100:$0.4089 10:$0.5480 1:$0.6400
IPD60R1K5CEATMA1 DISTI # IPD60R1K5CEATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V TO-252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IPD60R1K5CEATMA1 DISTI # 726-IPD60R1K5CEATMA1	Infineon Technologies AG	MOSFET N-Ch 600V 3.1A DPAK-2 RoHS: Compliant	149	1:$0.6300 10:$0.5210 100:$0.3180 1000:$0.2460 2500:$0.2100

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