IPD50R500CEATMA1

Mfr. #:: IPD50R500CEATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-Ch 550V 24A DPAK-2
生命週期:: 製造商新產品
數據表:: IPD50R500CEATMA1 數據表
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產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: XPD50R500

打包: 捲軸

部分別名: IPD50R500CE SP001117704

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 57 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 12 ns

上升時間: 5 ns

VGS-柵極-源極-電壓: 30 V

Id 連續漏極電流: 24 A

Vds-漏-源-擊穿電壓: 500 V

VGS-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 500 mOhms

晶體管極性: N通道

典型關斷延遲時間: 30 ns

典型開啟延遲時間: 6 ns

Qg-門電荷: 18.7 nC

Tags: IPD50R50, IPD50R5, IPD50R, IPD50, IPD5, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD50R500CEATMA1 描述

***ical: Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R

***el Electronic: MOSFET N-Ch 500V 24A DPAK-2

***i-Key: MOSFET N-CH 500V 7.6A TO252-3

***nell: MOSFET, N-CH, 500V, 7.6A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.6A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; Pow

***ark: Mosfet Transistor, N Channel, 6.1 A, 500 V, 0.59 Ohm, 13 V, 3 V Rohs Compliant: Yes

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.022uF 25volt X7R +/-5%

***nell: MOSFET, N-CH, 500V, 6.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.59ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P

***ineon SCT: 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHS

***ineon: 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

***ical: Trans MOSFET N-CH 600V 9.1A 3-Pin(2+Tab) DPAK T/R

***et: Trans MOSFET N-CH 650V 9.1A 3-Pin TO-252 T/R

***i-Key Marketplace: COOLMOS N-CHANNEL POWER MOSFET

***ure Electronics: Single N-Channel 600 V 600 mOhm 20.5 nC CoolMOS Power Mosfet - TO-252-3

***roFlash: Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ment14 APAC: MOSFET,N CH,600V,7.3A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.3A; Power Dissipation Pd:63W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***icroelectronics: N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package

***ical: Trans MOSFET N-CH 650V 5.5A 3-Pin(2+Tab) DPAK T/R

***el Electronic: IC REG LIN 1.5V 3A DDPAK/TO263-5

***r Electronics: Power Field-Effect Transistor, 5.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***emi: Power MOSFET 600V 5.9A 900mOhm Single N-Channel DPAK

***ical: Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R

***ark: REEL / NFET DPAK 600V 5.9A 900

***icroelectronics: N-channel 400 V, 0.59 Ohm typ., 6 A MDmesh M2 Power MOSFET in a DPAK package

***ure Electronics: N-Channel 400 V 800 mOhm Surface Mount MDmesh II Plus Power Mosfet - DPAK

***nell: POWER MOSFET, N CHANNEL, 6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 0.59ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)

***r Electronics: Power Field-Effect Transistor, 6A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Market price

型號	製造商	描述	庫存
IPD50R500CEATMA1 DISTI # IPD50R500CEATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 500V 7.6A PG-TO252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IPD50R500CEATMA1 DISTI # IPD50R500CEATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 500V 7.6A PG-TO252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD50R500CEATMA1 DISTI # IPD50R500CEATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 500V 7.6A PG-TO252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call

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