PartNumber | IPD50R1K4CEAUMA1 | IPD50R1K4CEBTMA1 | IPD50R280CEATMA1 |
Description | MOSFET CONSUMER | MOSFET N-Ch 500V 8.8A DPAK-2 | MOSFET N-CH 500V 13A PG-TO252 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | CoolMOS CE | IPD50R1 | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPD50R1K4CE SP001396808 | IPD50R1K4CEBTMA1 SP000992072 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Id Continuous Drain Current | - | 4.8 A | - |
Rds On Drain Source Resistance | - | 1.26 Ohms | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 8.2 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 42 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Fall Time | - | 30 ns | - |
Rise Time | - | 6 ns | - |
Typical Turn Off Delay Time | - | 23 ns | - |
Typical Turn On Delay Time | - | 6.5 ns | - |