FQP9N50C

FQP9N50C
Mfr. #:
FQP9N50C
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 500V N-Ch Q-FET advance C-Series
生命週期:
製造商新產品
數據表:
FQP9N50C 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-220-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
500 V
Id - 連續漏極電流:
9 A
Rds On - 漏源電阻:
800 mOhms
Vgs - 柵源電壓:
30 V
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
135 W
配置:
單身的
頻道模式:
增強
打包:
管子
高度:
16.3 mm
長度:
10.67 mm
系列:
FQP9N50C
晶體管類型:
1 N-Channel
類型:
MOSFET
寬度:
4.7 mm
品牌:
安森美半導體/飛兆半導體
正向跨導 - 最小值:
6.5 S
秋季時間:
64 ns
產品類別:
MOSFET
上升時間:
65 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
93 ns
典型的開啟延遲時間:
18 ns
第 # 部分別名:
FQP9N50C_NL
單位重量:
0.063493 oz
Tags
FQP9N50C, FQP9N5, FQP9N, FQP9, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220
***et
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Rail
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):650mohm; Rds(on) Test Voltage Vgs:10V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:9A; Package / Case:TO-220; Power Dissipation Pd:135W; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
型號 製造商 描述 庫存 價格
FQP9N50C
DISTI # V36:1790_06359356
ON Semiconductor500V N-CHANNEL ADVANCE Q-FET C0
    FQP9N50C
    DISTI # FQP9N50C-ND
    ON SemiconductorMOSFET N-CH 500V 9A TO-220
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Limited Supply - Call
      FQP9N50C
      DISTI # FQP9N50C
      ON SemiconductorTrans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP9N50C)
      RoHS: Compliant
      Min Qty: 1
      Europe - 0
      • 1000:€0.6769
      • 500:€0.6919
      • 100:€0.7139
      • 50:€0.7309
      • 25:€0.8659
      • 10:€1.0439
      • 1:€1.3419
      FQP9N50C
      DISTI # FQP9N50C
      ON SemiconductorTrans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP9N50C)
      RoHS: Compliant
      Min Qty: 391
      Container: Bulk
      Americas - 0
      • 3910:$0.7899
      • 1955:$0.8099
      • 1173:$0.8199
      • 782:$0.8309
      • 391:$0.8359
      FQP9N50C
      DISTI # FQP9N50C
      ON SemiconductorTrans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP9N50C)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tube
      Americas - 0
      • 10000:$0.6189
      • 6000:$0.6349
      • 4000:$0.6429
      • 2000:$0.6509
      • 1000:$0.6549
      FQP9N50C
      DISTI # 84H4785
      ON SemiconductorN CHANNEL MOSFET, 500V, 9A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.65ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:- RoHS Compliant: Yes0
      • 5000:$0.7620
      • 2500:$0.7860
      • 1000:$0.9730
      • 500:$1.0900
      • 100:$1.1800
      • 10:$1.4600
      • 1:$1.7200
      FQP9N50C
      DISTI # 512-FQP9N50C
      ON SemiconductorMOSFET 500V N-Ch Q-FET advance C-Series
      RoHS: Compliant
      0
      • 1000:$0.8360
      • 2000:$0.7780
      • 5000:$0.7500
      • 10000:$0.7210
      FQP9N50CFairchild Semiconductor CorporationPower Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      200
      • 1000:$0.8400
      • 500:$0.8900
      • 100:$0.9200
      • 25:$0.9600
      • 1:$1.0400
      FQP9N50C  675
        FQP9N50C
        DISTI # FQP9N50C
        ON SemiconductorTransistor: N-MOSFET,unipolar,500V,5.4A,135W,TO220AB93
        • 1:$0.8100
        • 5:$0.7100
        • 25:$0.5600
        • 100:$0.5100
        • 500:$0.4700
        FQP9N50C
        DISTI # 1611402
        ON Semiconductor 
        RoHS: Compliant
        0
        • 2500:$1.0800
        • 1000:$1.1200
        • 500:$1.4100
        • 100:$1.6000
        • 10:$2.0800
        • 1:$2.4400
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        FQP9N90CT

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        OMO.#: OMO-FQP9N90CT-1190

        全新原裝
        可用性
        庫存:
        Available
        訂購:
        2500
        輸入數量:
        FQP9N50C的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格(美元)
        數量
        單價
        小計金額
        1000
        US$0.64
        US$642.00
        2000
        US$0.57
        US$1 138.00
        10000
        US$0.55
        US$5 480.00
        由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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