FQP9N50C

FQP9N50C vs FQP9N50C , MM1Z5V1 vs FQP9N50C,9N50C

 
PartNumberFQP9N50CFQP9N50C , MM1Z5V1FQP9N50C,9N50C
DescriptionMOSFET 500V N-Ch Q-FET advance C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance800 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation135 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFQP9N50C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min6.5 S--
Fall Time64 ns--
Product TypeMOSFET--
Rise Time65 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time93 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesFQP9N50C_NL--
Unit Weight0.063493 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP9N50C MOSFET 500V N-Ch Q-FET advance C-Series
FQP9N50C , MM1Z5V1 全新原裝
FQP9N50C,9N50C 全新原裝
FQP9N50C,9N50C, 全新原裝
ON Semiconductor
ON Semiconductor
FQP9N50C MOSFET 500V N-Ch Q-FET advance C-Series
Top