TGF2080

Mfr. #:: TGF2080
製造商:: Qorvo
描述:: RF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56%
生命週期:: 製造商新產品
數據表:: TGF2080 數據表
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更多信息:: TGF2080 更多信息

產品屬性
屬性值

製造商: TriQuint (Qorvo)

產品分類: 晶體管 - FET、MOSFET - 單

系列: 轉化生長因子

打包: 托盤

部分別名: 1098414

安裝方式: 貼片/貼片

工作溫度範圍: - 65 C to + 150 C

包裝盒: 0.41 mm x 0.34 mm x 0.1 mm

技術: 砷化鎵

配置: 雙重的

晶體管型: pHEMT

獲得: 11.5 dB

鈀功耗: 4.2 W

最高工作溫度: + 150 C

最低工作溫度: - 65 C

工作頻率: 12 GHz

Id 連續漏極電流: 259 mA

Vds-漏-源-擊穿電壓: 12 V

正向跨導最小值: 309 mS

VGS-柵極-源極擊穿電壓: - 7 V

最大漏柵電壓: - 12 V

P1dB-壓縮點: 29.5 dBm

Tags: TGF20, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2080 更多信息

TGF2080 Discrete GaAs pHEMT: Qorvo TGF2080 is a discrete 800-Micron pHEMT which operates from DC to 20 GHz. TGF2080 is designed using Qorvo’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. TGF2080 typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power-added efficiency at 1 dB compression. This performance makes the TGF2080 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

Market price

型號	製造商	描述	庫存	價格
TGF2080 DISTI # 772-TGF2080	Qorvo	RF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56% RoHS: Compliant	0	100:$9.7400 300:$9.1000 500:$8.5100 1000:$7.9500

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