TGF2935

TGF2935
Mfr. #:
TGF2935
製造商:
Qorvo
描述:
RF JFET Transistors DC-25GHz 5Watt NF 1.3dB GaN
生命週期:
製造商新產品
數據表:
TGF2935 數據表
交貨:
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ECAD Model:
更多信息:
TGF2935 更多信息
產品屬性
屬性值
製造商:
科沃
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵碳化矽
獲得:
16 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
-
Vgs - 柵源擊穿電壓:
-
Id - 連續漏極電流:
360 mA
輸出功率:
4.8 W
最大漏柵電壓:
-
最低工作溫度:
- 40 C
最高工作溫度:
+ 85 C
Pd - 功耗:
5 W
安裝方式:
貼片/貼片
打包:
凝膠包
應用:
國防和航空航天,寬帶無線
配置:
單身的
工作頻率:
DC to 25 GHz
系列:
轉化生長因子
品牌:
科沃
正向跨導 - 最小值:
-
NF - 噪聲係數:
1.3 dB
產品類別:
射頻 JFET 晶體管
出廠包裝數量:
50
子類別:
晶體管
第 # 部分別名:
1113815
Tags
TGF293, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC - 25 Ghz, 16 dB, 5 W, 28 V, GaN, .60 x .55 x.10, DIE
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
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可用性
庫存:
Available
訂購:
5000
輸入數量:
TGF2935的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
50
US$23.73
US$1 186.50
100
US$20.97
US$2 097.00
250
US$19.50
US$4 875.00
500
US$18.14
US$9 070.00
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