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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPB022N04LGATMA1 DISTI # IPB022N04LGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 40V 90A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB022N04LGATMA1 DISTI # IPB022N04LGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 40V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB022N04LGATMA1 DISTI # IPB022N04LGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 40V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB022N04L G DISTI # IPB022N04LG | Infineon Technologies AG | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB022N04LG) RoHS: Not Compliant Min Qty: 404 Container: Bulk | Americas - 0 |
|
| IPB022N04LGATMA1 DISTI # IPB022N04LGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 40V 90A 3-Pin TO-263 T/R - Bulk (Alt: IPB022N04LGATMA1) RoHS: Compliant Min Qty: 404 Container: Bulk | Americas - 0 |
|
| IPB022N04L G DISTI # 726-IPB022N04LG | Infineon Technologies AG | MOSFET N-Ch 40V 90A D2PAK-2 RoHS: Compliant | 0 | |
| IPB022N04LG | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1840 |
|
| IPB022N04LGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 3000 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: IPB024N10N5ATMA1 OMO.#: OMO-IPB024N10N5ATMA1 |
MOSFET DIFFERENTIATED MOSFETS |
|
Mfr.#: IPB020N08N5ATMA1 OMO.#: OMO-IPB020N08N5ATMA1 |
MOSFET N-Ch 80V 120A D2PAK-2 |
|
Mfr.#: IPB020N04NGATMA1 OMO.#: OMO-IPB020N04NGATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: IPB027N10N3GATMA1 |
MOSFET N-CH 100V 120A TO263-3 |
|
Mfr.#: IPB020N04NGATMA1 |
MOSFET N-CH 40V 140A TO263-7 |
|
Mfr.#: IPB020NE7N3G OMO.#: OMO-IPB020NE7N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
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Mfr.#: IPB020NE7N3G(020NE7N) |
全新原裝 |
|
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Mfr.#: IPB021N04NGATMA1 OMO.#: OMO-IPB021N04NGATMA1-1190 |
全新原裝 |
|
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Mfr.#: IPB021N06N3 OMO.#: OMO-IPB021N06N3-1190 |
全新原裝 |
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Mfr.#: IPB024N08N5 OMO.#: OMO-IPB024N08N5-1190 |
N-CH 80V 120A 2,4mOhm TO263-3 |