OMO ElectronicOMO Electronic
Expand menu
0 購物車

IPB020NE7N3G

IPB020NE7N3G
Mfr. #:
IPB020NE7N3G
製造商:
Rochester Electronics, LLC
描述:
Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
生命週期:
製造商新產品
數據表:
IPB020NE7N3G 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
Tags
IPB020NE7N3G, IPB020NE, IPB020, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型號 製造商 描述 庫存 價格
IPB020NE7N3GATMA1
DISTI # V72:2272_06377372		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$2.7250
  • 500:$3.3590
  • 250:$3.9820
  • 100:$4.0220
  • 25:$4.9509
  • 10:$5.0010
  • 1:$6.1787
IPB020NE7N3GATMA1
DISTI # V36:1790_06377372		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$2.3000
  • 500000:$2.3020
  • 100000:$2.4680
  • 10000:$2.7450
  • 1000:$2.7900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3171In Stock
  • 500:$3.5450
  • 100:$4.1643
  • 10:$5.0830
  • 1:$5.6600
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3171In Stock
  • 500:$3.5450
  • 100:$4.1643
  • 10:$5.0830
  • 1:$5.6600
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 2000:$2.7575
  • 1000:$2.9027
IPB020NE7N3GATMA1
DISTI # 32911882		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$2.4235
IPB020NE7N3GATMA1
DISTI # 32914046		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 3:$6.1787
IPB020NE7N3 G
DISTI # IPB020NE7N3G		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB020NE7N3G)
RoHS: Not Compliant
Min Qty: 139
Container: Bulk		Americas - 0
  • 695:$2.4900
  • 1390:$2.4900
  • 417:$2.5900
  • 278:$2.6900
  • 139:$2.7900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB020NE7N3GATMA1)
RoHS: Compliant
Min Qty: 142
Container: Bulk		Americas - 0
  • 710:$2.1900
  • 1420:$2.1900
  • 426:$2.2900
  • 284:$2.3900
  • 142:$2.4900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB020NE7N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$2.4900
  • 10000:$2.4900
  • 4000:$2.5900
  • 2000:$2.6900
  • 1000:$2.7900
IPB020NE7N3GATMA1
DISTI # SP000676950		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 (Alt: SP000676950)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€2.0900
  • 6000:€2.2900
  • 4000:€2.3900
  • 2000:€2.4900
  • 1000:€2.5900
IPB020NE7N3GATMA1
DISTI # 85X6012		Infineon Technologies AGMOSFET Transistor, N Channel, 120 A, 75 V, 0.0018 ohm, 10 V, 3.1 V RoHS Compliant: Yes0
    IPB020NE7N3 G
    DISTI # 726-IPB020NE7N3GXT    		Infineon Technologies AGMOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		525
    • 1:$5.2200
    • 10:$4.4400
    • 100:$3.8500
    • 250:$3.6500
    • 500:$3.2700
    • 1000:$2.7600
    • 2000:$2.6200
    IPB020NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		5948
    • 1000:$2.5900
    • 500:$2.7300
    • 100:$2.8400
    • 25:$2.9600
    • 1:$3.1900
    IPB020NE7N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		10245
    • 1000:$2.3300
    • 500:$2.4500
    • 100:$2.5500
    • 25:$2.6600
    • 1:$2.8700
    IPB020NE7N3GATMA1
    DISTI # 8259213P    		Infineon Technologies AGMOSFET N-CH 120A 75V OPTIMOS3 TO263, RL1630
    • 25:£2.0800
    IPB020NE7N3GATMA1
    DISTI # 8259213    		Infineon Technologies AGMOSFET N-CH 120A 75V OPTIMOS3 TO263, PK150
    • 25:£2.0800
    • 5:£2.1340
    IPB020NE7N3GATMA1
    DISTI # IPB020NE7N3GATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,75V,120A,300W,PG-TO263-3379
    • 100:$1.9933
    • 10:$2.3875
    • 3:$2.5902
    • 1:$2.7816
    IPB020NE7N3GATMA1
    DISTI # 2443378    		Infineon Technologies AGMOSFET, N CH, 75V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.1600
    • 500:$4.9300
    • 250:$5.5000
    • 100:$5.8000
    • 10:$6.6900
    • 1:$7.8700
    IPB020NE7N3GATMA1
    DISTI # 2443378RL    		Infineon Technologies AGMOSFET, N CH, 75V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.1600
    • 500:$4.9300
    • 250:$5.5000
    • 100:$5.8000
    • 10:$6.6900
    • 1:$7.8700
    IPB020NE7N3 G
    DISTI # TMOSP10315    		Infineon Technologies AGN-CH75V 120A2mOhm TO263-3
    RoHS: Compliant    		Stock DE - 2005Stock HK - 0Stock US - 0
    • 1000:$2.6000
    圖片 型號 描述
    IPB020N04NGATMA1

    Mfr.#: IPB020N04NGATMA1

    OMO.#: OMO-IPB020N04NGATMA1

    		 MOSFET MV POWER MOS
    IPB020N10N5LFATMA1

    Mfr.#: IPB020N10N5LFATMA1

    OMO.#: OMO-IPB020N10N5LFATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V D2PAK-3
    IPB020N08N5ATMA1-CUT TAPE

    Mfr.#: IPB020N08N5ATMA1-CUT TAPE

    OMO.#: OMO-IPB020N08N5ATMA1-CUT-TAPE-1190

    		 全新原裝
    IPB020N04N

    Mfr.#: IPB020N04N

    OMO.#: OMO-IPB020N04N-1190

    		 全新原裝
    IPB020N04NG

    Mfr.#: IPB020N04NG

    OMO.#: OMO-IPB020N04NG-1190

    		 全新原裝
    IPB020NE7N3

    Mfr.#: IPB020NE7N3

    OMO.#: OMO-IPB020NE7N3-1190

    		 全新原裝
    IPB020NE7N3G

    Mfr.#: IPB020NE7N3G

    OMO.#: OMO-IPB020NE7N3G-1190

    		 Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    IPB020NE7N3GATMA1

    Mfr.#: IPB020NE7N3GATMA1

    OMO.#: OMO-IPB020NE7N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 75V 120A TO263-3
    IPB020N10N5ATMA1

    Mfr.#: IPB020N10N5ATMA1

    OMO.#: OMO-IPB020N10N5ATMA1-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2
    IPB020N08N5ATMA1

    Mfr.#: IPB020N08N5ATMA1

    OMO.#: OMO-IPB020N08N5ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2
    可用性
    庫存:
    Available
    訂購:
    5000
    輸入數量:
    IPB020NE7N3G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
    從...開始
    最新產品
    • IO-Link™ Devices
      IO-Link™ Devices
      Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
    • Large Diameter Clear Hole Spacers
      Large Diameter Clear Hole Spacers
      RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
    • WE-ExB Series Common Mode Power Line Choke
      WE-ExB Series Common Mode Power Line Choke
      Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
    • CPI2-B1-REU Production Device Programmer
      CPI2-B1-REU Production Device Programmer
      Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
    • CFSH05-20L Schottky Diode
      CFSH05-20L Schottky Diode
      Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
    More Newest Products
    Top