FD150R12RT4HOSA1

Mfr. #:: FD150R12RT4HOSA1
製造商:: Infineon Technologies
描述:: IGBT MODULE 1200V 150A
生命週期:: 製造商新產品
數據表:: FD150R12RT4HOSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

Tags: FD150R12, FD150R, FD150, FD15, FD1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FD150R12RT4HOSA1 描述

***ical: Trans IGBT Module N-CH 1200V 150A 790000mW Automotive 5-Pin 34MM-1 Tray

***ment14 APAC: IGBT, MED POW, FD CHO, 1200V, 125A; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:5; SVHC:No SVHC (19-Dec-2011); Module Configuration:Single; Power Dissipation Max:790W

***ineon: Our well-known 34 mm 1200V chopper IGBT modules with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

Market price

型號	製造商	描述	庫存	價格
FD150R12RT4HOSA1 DISTI # V99:2348_18204841	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 150A 5-Pin Tray RoHS: Compliant	10	10:$50.4700 1:$54.2400
FD150R12RT4HOSA1 DISTI # V36:1790_18204841	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 150A 5-Pin Tray RoHS: Compliant	0	10000:$38.3800 5000:$38.4000 1000:$42.2700 100:$52.4400 10:$54.3700
FD150R12RT4HOSA1 DISTI # FD150R12RT4HOSA1-ND	Infineon Technologies AG	IGBT MODULE 1200V 150A RoHS: Compliant Min Qty: 1 Container: Bulk	12In Stock	10:$51.0760 1:$54.3700
FD150R12RT4HOSA1 DISTI # 27577031	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 150A 5-Pin Tray RoHS: Compliant	10	10:$50.4700 1:$54.2400
FD150R12RT4HOSA1 DISTI # SP000711858	Infineon Technologies AG	MEDIUM POWER 34MM (Alt: SP000711858) RoHS: Compliant Min Qty: 1	Europe - 8	1000:€37.2900 500:€39.9900 100:€41.3900 50:€42.9900 25:€44.7900 10:€46.5900 1:€50.8900
FD150R12RT4HOSA1 DISTI # FD150R12RT4HOSA1	Infineon Technologies AG	MEDIUM POWER 34MM - Bulk (Alt: FD150R12RT4HOSA1) Min Qty: 9 Container: Bulk	Americas - 0	90:$38.9900 45:$39.6900 27:$41.0900 18:$42.6900 9:$44.2900
FD150R12RT4HOSA1 DISTI # FD150R12RT4HOSA1	Infineon Technologies AG	MEDIUM POWER 34MM - Trays (Alt: FD150R12RT4HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	100:$39.6900 60:$40.5900 40:$41.6900 20:$42.6900 10:$43.2900
FD150R12RT4 DISTI # 641-FD150R12RT4	Infineon Technologies AG	IGBT Modules IGBT 1200V 150A RoHS: Compliant	13	1:$54.3700 5:$53.1500 10:$51.0800 25:$49.4300 100:$45.8100
FD150R12RT4HOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS: Compliant	1183	1000:$40.4700 500:$42.6000 100:$44.3600 25:$46.2600 1:$49.8100

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