STU13N60M2

STU13N60M2
Mfr. #:
STU13N60M2
製造商:
STMicroelectronics
描述:
MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
生命週期:
製造商新產品
數據表:
STU13N60M2 數據表
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ECAD Model:
更多信息:
STU13N60M2 更多信息 STU13N60M2 Product Details
產品屬性
屬性值
製造商:
意法半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-251-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
650 V
Id - 連續漏極電流:
11 A
Rds On - 漏源電阻:
380 mOhms
Vgs th - 柵源閾值電壓:
3 V
Vgs - 柵源電壓:
25 V
Qg - 門電荷:
17 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
110 W
配置:
單身的
商品名:
網狀網
打包:
管子
系列:
STU13N60M2
晶體管類型:
1 N-Channel
品牌:
意法半導體
秋季時間:
9.5 ns
產品類別:
MOSFET
上升時間:
10 ns
出廠包裝數量:
3000
子類別:
MOSFET
典型關斷延遲時間:
41 ns
典型的開啟延遲時間:
11 ns
單位重量:
0.139332 oz
Tags
STU13N, STU13, STU1, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 0.39 Ohm Through Hole MDmesh M2 II Plus Mosfet - IPAK
***p One Stop
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube
***(Formerly Allied Electronics)
Power MOSFET Nch MDmesh II plus 600V 11A
***icroelectronics SCT
Power MOSFETs, 600V, 11A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics SCT
Power MOSFETs, 600V, 11A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube
***enic
600V 12A 280m´Î@10V6A 110W 3V@250uA 1.2pF@100V N Channel 700pF@100v 19nC@10V +150¡Í@(Tj) TO-251(I-PAK) MOSFETs ROHS
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***icroelectronics
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N CH, 600V, 8A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
***el Electronic
VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK
***S
French Electronic Distributor since 1988
***nell
MOSFET, N-CH, 600V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ure Electronics
IRFU430A Series N-Channel 500 V 2 Ohm 110 W Power Mosfet - IPAK (TO-251)
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 500V,RDS(ON) 1.7 Ohms,ID 5A,I-Pak,PD 110W,VGS+/-30V,-55C
*** Stop Electro
Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):1.7ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 500V, 5A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:1.1°C/W; On State resistance @ Vgs = 10V:1.7kohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:20A; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:27ns; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
型號 製造商 描述 庫存 價格
STU13N60M2
DISTI # 497-13885-5-ND
STMicroelectronicsMOSFET N-CH 600V 11A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
3000In Stock
  • 5025:$1.0442
  • 2550:$1.0844
  • 525:$1.4057
  • 150:$1.7109
  • 75:$2.0081
  • 10:$2.1290
  • 1:$2.3700
STU13N60M2
DISTI # STU13N60M2
STMicroelectronicsTrans MOSFET N-CH 600V 11A 3-Pin IPAK Tube (Alt: STU13N60M2)
RoHS: Compliant
Min Qty: 75
Container: Tube
Europe - 3174
  • 750:€0.6499
  • 450:€0.6999
  • 300:€0.7589
  • 150:€0.8279
  • 75:€1.0119
STU13N60M2
DISTI # STU13N60M2
STMicroelectronicsTrans MOSFET N-CH 600V 11A 3-Pin IPAK Tube - Rail/Tube (Alt: STU13N60M2)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 30000:$0.9769
  • 18000:$0.9969
  • 12000:$1.0429
  • 6000:$1.0919
  • 3000:$1.1459
STU13N60M2
DISTI # 06X3750
STMicroelectronicsPTD HIGH VOLTAGE0
  • 5000:$0.9950
  • 2500:$1.0300
  • 1000:$1.2700
  • 500:$1.4200
  • 100:$1.5300
  • 10:$1.9100
  • 1:$2.2500
STU13N60M2
DISTI # 511-STU13N60M2
STMicroelectronicsMOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
RoHS: Compliant
0
  • 3000:$1.0400
STU13N60M2
DISTI # STU13N60M2
STMicroelectronicsTransistor: N-MOSFET,unipolar,600V,7A,110W,IPAK55
  • 50:$1.4400
  • 10:$1.6000
  • 3:$2.0000
  • 1:$2.3200
STU13N60M2
DISTI # TMOSP11424
STMicroelectronicsN-CH 600V 11A 380mOhmTO251-3
RoHS: Compliant
Stock DE - 2850Stock HK - 0Stock US - 0
  • 75:$0.9933
  • 150:$0.9365
  • 300:$0.8798
  • 450:$0.7946
  • 750:$0.7662
STU13N60M2STMicroelectronics600V,0.35,11A,N-Channel Power MOSFET116
  • 1:$1.0900
  • 100:$0.9700
  • 500:$0.9200
  • 1000:$0.8300
STU13N60M2
DISTI # XSKDRABS0031159
STMicroelectronicsParallel I/O Port, 4 I/O, CMOS, PDSO8
RoHS: Compliant
2550 in Stock0 on Order
  • 2550:$0.9240
  • 750:$0.9900
圖片 型號 描述
SIR696DP-T1-GE3

Mfr.#: SIR696DP-T1-GE3

OMO.#: OMO-SIR696DP-T1-GE3

MOSFET 125V Vds 20V Vgs PowerPAK SO-8
STTH108A

Mfr.#: STTH108A

OMO.#: OMO-STTH108A

Rectifiers 1.0 Amp 800 Volt
NCP43080DDR2G

Mfr.#: NCP43080DDR2G

OMO.#: OMO-NCP43080DDR2G

Switching Controllers SECONDARY SIDE SYNCHRONOU
GRM188R6YA475KE15D

Mfr.#: GRM188R6YA475KE15D

OMO.#: OMO-GRM188R6YA475KE15D

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 4.7uF 35volts X5R 10%
SIR696DP-T1-GE3

Mfr.#: SIR696DP-T1-GE3

OMO.#: OMO-SIR696DP-T1-GE3-VISHAY

MOSFET N-CH 125V 60A POWERPAKSO
GRT188R61H105KE13D

Mfr.#: GRT188R61H105KE13D

OMO.#: OMO-GRT188R61H105KE13D-MURATA-ELECTRONICS

Cap Ceramic 1uF 50V X5R 10% Pad SMD 0603 85C Automotive T/R
NCP43080DDR2G

Mfr.#: NCP43080DDR2G

OMO.#: OMO-NCP43080DDR2G-ON-SEMICONDUCTOR

Switching Controllers SECONDARY SIDE SYNCHRONOU
GRM188R6YA475KE15D

Mfr.#: GRM188R6YA475KE15D

OMO.#: OMO-GRM188R6YA475KE15D-MURATA-ELECTRONICS

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 4.7uF 35volts X5R 10%
STTH108A

Mfr.#: STTH108A

OMO.#: OMO-STTH108A-STMICROELECTRONICS

DIODE GEN PURP 800V 1A SMA
可用性
庫存:
Available
訂購:
2500
輸入數量:
STU13N60M2的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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