IPB200N15N3G

IPB200N15N3G
Mfr. #:
IPB200N15N3G
製造商:
Rochester Electronics, LLC
描述:
Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
生命週期:
製造商新產品
數據表:
IPB200N15N3G 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商
英飛凌
產品分類
FET - 單
Tags
IPB200N15N3G, IPB200N15N3, IPB200N1, IPB200, IPB20, IPB2, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型號 製造商 描述 庫存 價格
IPB200N15N3GATMA1
DISTI # 31077231
Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
4000
  • 2000:$1.2425
  • 1000:$1.3875
IPB200N15N3 G
DISTI # 30579106
Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263
RoHS: Compliant
1000
  • 500:$1.6575
  • 100:$1.8870
  • 50:$2.0145
  • 10:$2.3843
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 150V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1999In Stock
  • 500:$1.8473
  • 100:$2.3751
  • 10:$2.9560
  • 1:$3.2700
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 150V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1999In Stock
  • 500:$1.8473
  • 100:$2.3751
  • 10:$2.9560
  • 1:$3.2700
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 150V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 1000:$1.4861
IPB200N15N3 G
DISTI # C1S322000088900
Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 100:$1.4800
  • 50:$1.5800
  • 10:$1.8700
  • 1:$2.2000
IPB200N15N3GATMA1
DISTI # C1S322000281482
Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
4000
  • 1000:$1.3800
IPB200N15N3 G
DISTI # SP000414740
Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.8900
  • 2000:€1.4900
  • 4000:€1.1900
  • 6000:€1.0900
  • 10000:€1.0900
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N15N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.2900
  • 2000:$1.1900
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.0900
IPB200N15N3GATMA1
DISTI # SP000414740
Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.5199
  • 2000:€1.2669
  • 4000:€1.1689
  • 6000:€1.0859
  • 10000:€1.0129
IPB200N15N3GATMA1
DISTI # 60R2679
Infineon Technologies AGMOSFET, N CH, 150V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes0
  • 1:$2.8600
  • 10:$2.5700
  • 100:$2.0600
  • 500:$1.6900
IPB200N15N3 G
DISTI # 726-IPB200N15N3G
Infineon Technologies AGMOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
0
  • 1:$2.7500
  • 10:$2.3300
  • 100:$1.8700
  • 500:$1.6400
  • 1000:$1.3600
IPB200N15N3GInfineon Technologies AGPower Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
127
  • 1000:$1.1200
  • 500:$1.1800
  • 100:$1.2300
  • 25:$1.2800
  • 1:$1.3800
IPB200N15N3GATMA1
DISTI # 7545443
Infineon Technologies AGMOSFET N-CHANNEL 150V 50A OPTIMOS3 TO263, PK286
  • 2:£2.0250
  • 10:£1.6050
  • 50:£1.4450
  • 250:£1.2850
  • 500:£1.1250
IPB200N15N3G
DISTI # XSKDRABV0030580
INF 
RoHS: Compliant
720
  • 1000:$1.9000
IPB200N15N3GATMA1
DISTI # 1775559
Infineon Technologies AGMOSFET, N CH, 50A, 150V, PG-TO263-3
RoHS: Compliant
954
  • 1:£2.0500
  • 10:£1.4600
  • 100:£1.3800
  • 250:£1.3000
  • 500:£1.1400
圖片 型號 描述
IPB200N25N3 G

Mfr.#: IPB200N25N3 G

OMO.#: OMO-IPB200N25N3-G

MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
IPB200N15N3GATMA1

Mfr.#: IPB200N15N3GATMA1

OMO.#: OMO-IPB200N15N3GATMA1

MOSFET MV POWER MOS
IPB200N15N

Mfr.#: IPB200N15N

OMO.#: OMO-IPB200N15N-1190

全新原裝
IPB200N15N3

Mfr.#: IPB200N15N3

OMO.#: OMO-IPB200N15N3-1190

Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB200N15N3 G

Mfr.#: IPB200N15N3 G

OMO.#: OMO-IPB200N15N3-G-1190

Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263
IPB200N15N3G

Mfr.#: IPB200N15N3G

OMO.#: OMO-IPB200N15N3G-1190

Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB200N15N3G 200N15N

Mfr.#: IPB200N15N3G 200N15N

OMO.#: OMO-IPB200N15N3G-200N15N-1190

全新原裝
IPB200N15N3S

Mfr.#: IPB200N15N3S

OMO.#: OMO-IPB200N15N3S-1190

全新原裝
IPB200N25N3 G(SP0006778

Mfr.#: IPB200N25N3 G(SP0006778

OMO.#: OMO-IPB200N25N3-G-SP0006778-1190

全新原裝
IPB200N25N3G(SP000677896

Mfr.#: IPB200N25N3G(SP000677896

OMO.#: OMO-IPB200N25N3G-SP000677896-1190

全新原裝
可用性
庫存:
Available
訂購:
4000
輸入數量:
IPB200N15N3G的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$1.68
US$1.68
10
US$1.60
US$15.96
100
US$1.51
US$151.20
500
US$1.43
US$714.00
1000
US$1.34
US$1 344.00
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