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FS200R12PT4PBOSA1

FS200R12PT4PBOSA1
Mfr. #:
FS200R12PT4PBOSA1
製造商:
Infineon Technologies
描述:
IGBT Modules MEDIUM POWER ECONO
生命週期:
製造商新產品
數據表:
FS200R12PT4PBOSA1 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
FS200R12PT4PBOSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT 模塊
RoHS：
Y
技術：
矽
產品：
IGBT 矽模塊
配置：
IGBT-逆變器
集電極-發射極電壓 VCEO 最大值：
1.2 kV
集電極-發射極飽和電壓：
1.75 V
25 C 時的連續集電極電流：
200 A
柵極-發射極漏電流：
100 nA
Pd - 功耗：
20 mW
包裝/案例：
130 mm x 103 mm x 20.55 mm
最低工作溫度：
- 40 C
最高工作溫度：
+ 150 C
打包：
托盤
品牌：
英飛凌科技
安裝方式：
底盤安裝
最大柵極發射極電壓：
20 V
產品類別：
IGBT 模塊
出廠包裝數量：
6
子類別：
IGBT
第 # 部分別名：
FS200R12PT4P SP001061018
Tags
FS200R12P, FS200R1, FS200R, FS200, FS20, FS2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOD IGBT MED PWR ECONO4-1
***et Europe
MEDIUM POWER ECONO
***ark
Igbt, Module, N-Ch, 1.2Kv, 200A; Transistor Polarity:n Channel; Dc Collector Current:200A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 200A; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EconoPACK 4 Series; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, MODULO, CA-N, 1.2KV, 200A; Polarità Transistor:Canale N; Corrente di Collettore CC:200A; Tensione Saturaz Collettore-Emettitore Vce(on):1.75V; Dissipazione di Potenza Pd:-; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EconoPACK 4 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EconoPACK 4 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material. | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; 2.5 kV AC 1min Insulation; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
EconoPACK™ 4 Power Modules
Infineon Technologies EconoPACK™ 4 Power Modules feature a rugged mechanical design with ultrasonic welded and injection-molded screw terminals. The EconoPACK™ 4 perfectly fits into the well-known Econo portfolio. The devices feature easy assembly with PressFIT control pins and screw power terminals for solderless connections. The modules have an optimized module layout for high-power densities.
型號 製造商 描述 庫存 價格
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1-ND		Infineon Technologies AGMOD IGBT MED PWR ECONO4-1
RoHS: Compliant
Min Qty: 6
Container: Tray		Temporarily Out of Stock
  • 6:$218.4350
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: FS200R12PT4PBOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray		Americas - 0
  • 60:$185.2900
  • 36:$189.8900
  • 24:$194.6900
  • 12:$199.6900
  • 6:$202.3900
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Bulk (Alt: FS200R12PT4PBOSA1)
Min Qty: 2
Container: Bulk		Americas - 0
  • 20:$182.3900
  • 10:$185.6900
  • 6:$192.0900
  • 4:$199.3900
  • 2:$206.7900
FS200R12PT4PBOSA1
DISTI # SP001061018		Infineon Technologies AGMEDIUM POWER ECONO (Alt: SP001061018)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€181.4900
  • 500:€185.6900
  • 100:€191.2900
  • 50:€197.7900
  • 25:€204.6900
  • 10:€225.1900
  • 1:€278.5900
FS200R12PT4PBOSA1
DISTI # 726-FS200R12PT4PBOSA		Infineon Technologies AGIGBT Modules MEDIUM POWER ECONO
RoHS: Compliant		9
  • 1:$223.0400
  • 5:$217.6800
  • 10:$212.2700
  • 25:$209.2900
FS200R12PT4PBOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant		24
  • 1000:$188.9100
  • 500:$198.8500
  • 100:$207.0200
  • 25:$215.9000
  • 1:$232.5000
FS200R12PT4PBOSA1
DISTI # 2781257		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 200A
RoHS: Compliant		0
  • 5:$342.7700
  • 1:$355.4600
FS200R12PT4PBOSA1
DISTI # 2781257		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 200A0
  • 5:£169.0000
  • 1:£172.0000
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可用性
庫存:
Available
訂購:
1990
輸入數量:
FS200R12PT4PBOSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$223.04
US$223.04
5
US$217.68
US$1 088.40
10
US$212.27
US$2 122.70
25
US$209.29
US$5 232.25
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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