FS200R12P

FS200R12PT4PBOSA1 vs FS200R12PT4 vs FS200R12PT4BOSA1

 
PartNumberFS200R12PT4PBOSA1FS200R12PT4FS200R12PT4BOSA1
DescriptionIGBT Modules MEDIUM POWER ECONOIGBT Modules EconoPACK4 200A 1200VIGBT MODULE VCES 600V 200A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
TechnologySi--
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationIGBT-Inverter--
Collector Emitter Voltage VCEO Max1.2 kV1200 V-
Collector Emitter Saturation Voltage1.75 V2.15 V-
Continuous Collector Current at 25 C200 A280 A-
Gate Emitter Leakage Current100 nA400 nA-
Pd Power Dissipation20 mW1000 W-
Package / Case130 mm x 103 mm x 20.55 mm--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTrayTray-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity66-
SubcategoryIGBTsIGBTs-
Part # AliasesFS200R12PT4P SP001061018FS200R12PT4BOSA1 SP000485586-
Unit Weight-13.756845 oz-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
FS200R12PT4PBOSA1 IGBT Modules MEDIUM POWER ECONO
FS200R12PT4 IGBT Modules EconoPACK4 200A 1200V
FS200R12PT4BOSA1 IGBT MODULE VCES 600V 200A
FS200R12PT4PBOSA1 MOD IGBT MED PWR ECONO4-1
FS200R12PT4 Trans IGBT Module N-CH 1.2KV 280A 20-Pin (Alt: FS200R12PT4)
FS200R12PT4P 全新原裝
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