AS4C512M16D3LA-12BIN

AS4C512M16D3LA-12BIN
Mfr. #:
AS4C512M16D3LA-12BIN
製造商:
Alliance Memory
描述:
DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
生命週期:
製造商新產品
數據表:
AS4C512M16D3LA-12BIN 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
AS4C512M16D3LA-12BIN 更多信息
產品屬性
屬性值
製造商:
聯盟記憶
產品分類:
動態隨機存取存儲器
RoHS:
Y
類型:
SDRAM - DDR3L
數據總線寬度:
16 bit
組織:
512 M x 16
包裝/案例:
FBGA-96
內存大小:
8 Gbit
最大時鐘頻率:
800 MHz
電源電壓 - 最大值:
1.45 V
電源電壓 - 最小值:
1.283 V
電源電流 - 最大值:
88 mA
最低工作溫度:
- 40 C
最高工作溫度:
+ 95 C
系列:
AS4C512M16D3LA
打包:
托盤
品牌:
聯盟記憶
安裝方式:
貼片/貼片
濕氣敏感:
是的
產品類別:
動態隨機存取存儲器
出廠包裝數量:
180
子類別:
內存和數據存儲
Tags
AS4C512M16D3LA-12, AS4C512M16D3LA, AS4C512M1, AS4C5, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR3L SDRAM
Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding  n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
圖片 型號 描述
AS4C512M16D3LB-12BCNTR

Mfr.#: AS4C512M16D3LB-12BCNTR

OMO.#: OMO-AS4C512M16D3LB-12BCNTR

DRAM 8G - Dual Die Package (DDP) -12 512M x 16 1.35V(1.283-1.45V) 800MHz DDR3-1600bps/pin Commercial (Extended) (0 95 C) 96-ball FBGA
AS4C512M16D3LB-12BINTR

Mfr.#: AS4C512M16D3LB-12BINTR

OMO.#: OMO-AS4C512M16D3LB-12BINTR

DRAM 8G - Dual Die Package (DDP) -12 512M x 16 1.35V(1.283-1.45V) 800MHz DDR3-1600bps/pin Industrial (-40 95 C) 96-ball FBGA
AS4C512M16D3LA-12BCNTR

Mfr.#: AS4C512M16D3LA-12BCNTR

OMO.#: OMO-AS4C512M16D3LA-12BCNTR

DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
AS4C512M16D3LA-12BINTR

Mfr.#: AS4C512M16D3LA-12BINTR

OMO.#: OMO-AS4C512M16D3LA-12BINTR

DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
AS4C512M16D3L-12BIN

Mfr.#: AS4C512M16D3L-12BIN

OMO.#: OMO-AS4C512M16D3L-12BIN

DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
AS4C512M16D3LB-12BCN

Mfr.#: AS4C512M16D3LB-12BCN

OMO.#: OMO-AS4C512M16D3LB-12BCN

DRAM 8G, DDR3L, 512M X 16, 1.35V, 96-BALL FBGA, 0 C to 95 C
AS4C512M16D3L-12BINTR

Mfr.#: AS4C512M16D3L-12BINTR

OMO.#: OMO-AS4C512M16D3L-12BINTR

DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
AS4C512M16D3L-12BIN

Mfr.#: AS4C512M16D3L-12BIN

OMO.#: OMO-AS4C512M16D3L-12BIN-ALLIANCE-MEMORY

IC DRAM 8G PARALLEL 96FBGA
AS4C512M16D3L-12BCN

Mfr.#: AS4C512M16D3L-12BCN

OMO.#: OMO-AS4C512M16D3L-12BCN-ALLIANCE-MEMORY

IC DRAM 8G PARALLEL 96FBGA
AS4C512M16D3L-12BINTR

Mfr.#: AS4C512M16D3L-12BINTR

OMO.#: OMO-AS4C512M16D3L-12BINTR-ALLIANCE-MEMORY

DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
可用性
庫存:
Available
訂購:
4500
輸入數量:
AS4C512M16D3LA-12BIN的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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