FQP7N10

Mfr. #:: FQP7N10
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 100V N-Channel QFET
生命週期:: 製造商新產品
數據表:: FQP7N10 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 100 V

Id - 連續漏極電流：: 7.3 A

Rds On - 漏源電阻：: 350 mOhms

Vgs - 柵源電壓：: 25 V

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

Pd - 功耗：: 40 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

高度：: 16.3 mm

長度：: 10.67 mm

晶體管類型：: 1 N-Channel

類型：: MOSFET

寬度：: 4.7 mm

品牌：: 安森美半導體/飛兆半導體

正向跨導 - 最小值：: 3.6 S

秋季時間：: 19 ns

產品類別：: MOSFET

上升時間：: 24 ns

出廠包裝數量：: 1000

子類別：: MOSFET

典型關斷延遲時間：: 13 ns

典型的開啟延遲時間：: 7 ns

單位重量：: 0.050717 oz

Tags: FQP7N1, FQP7N, FQP7, FQP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQP7N10 描述

***inecomponents.com: Trans MOSFET N-CH 100V 7.3A 3-Pin (3+Tab) TO-220 Rail

***ark: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:7.3A; Resistance, Rds On:0.35ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:50mJ; Capacitance Ciss Typ:190pF; Current Id Max:7.3A; Current Temperature:25°C; Device Marking:FQP7N10; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:350mohm; Package / Case:TO-220; Pin Configuration:a; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Power Dissipation Ptot Max:40W; Pulse Current Idm:29.2A; Reverse Recovery Time trr Typ:70ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Market price

型號	製造商	描述	庫存
FQP7N10 DISTI # FQP7N10-ND	ON Semiconductor	MOSFET N-CH 100V 7.3A TO-220 RoHS: Compliant Min Qty: 2000 Container: Tube	Limited Supply - Call
FQP7N10L DISTI # FQP7N10L-ND	ON Semiconductor	MOSFET N-CH 100V 7.3A TO-220 RoHS: Compliant Min Qty: 2000 Container: Tube	Limited Supply - Call
FQP7N10 DISTI # 512-FQP7N10	ON Semiconductor	MOSFET 100V N-Channel QFET RoHS: Compliant	0
FQP7N10L DISTI # 512-FQP7N10L	ON Semiconductor	MOSFET 100V N-Ch QFET Logic Level RoHS: Compliant	0
FQP7N10	Fairchild Semiconductor Corporation		1112

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