BSC070N10NS3GATMA1

BSC070N10NS3GATMA1
Mfr. #:
BSC070N10NS3GATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
生命週期:
製造商新產品
數據表:
BSC070N10NS3GATMA1 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
PG-TDSON-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
100 V
Id - 連續漏極電流:
90 A
Rds On - 漏源電阻:
7 mOhms
Vgs th - 柵源閾值電壓:
2 V
Vgs - 柵源電壓:
10 V
Qg - 門電荷:
42 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
114 W
配置:
單身的
頻道模式:
增強
商品名:
優化MOS
打包:
捲軸
高度:
1.27 mm
長度:
5.9 mm
系列:
OptiMOS 3
晶體管類型:
1 N-Channel
寬度:
5.15 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
36 S
秋季時間:
8 ns
產品類別:
MOSFET
上升時間:
10 ns
出廠包裝數量:
5000
子類別:
MOSFET
典型關斷延遲時間:
29 ns
典型的開啟延遲時間:
15 ns
第 # 部分別名:
BSC070N10NS3 BSC7N1NS3GXT G SP000778082
單位重量:
0.010582 oz
Tags
BSC070N10NS3, BSC070N10N, BSC070N, BSC070, BSC07, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 7 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; On Resistance Rds(On):0.0063Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***icroelectronics
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***icroelectronics SCT
Power MOSFETs, 100V, 110A, H2PAK-2, Tape and Reel
***S
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***el Electronic
CAP CERAMIC DISK RDL LONG LEADS
***ical
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R
***emi
Power MOSFET, 100V, 6.9mΩ, 100A, N-Channel
***r Electronics
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***el Electronic
RES SMD 30.9 OHM 1% 1W 2512
***ure Electronics
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114
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***S
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***ark
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***ure Electronics
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*** Source Electronics
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***ineon SCT
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***(Formerly Allied Electronics)
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***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 230 W
***el Electronic
Fixed LDO Voltage Regulator, 2.5V to 5.5V, 210mV Dropout, 3.3Vout, 1Aout, TSSOP-16
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MOSFET, N, 100V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissi
*** Stop Electro
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***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 100V 13A 8-Pin PQFN EP T/R / MOSFET N-CH 100V 13A 8-PQFN
***(Formerly Allied Electronics)
MOSFET, 100V, 100A, 9.0 mOhm, 65 nC Qg,PQFN 5x6
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***nell
MOSFET, N-CH, 100V, 13A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
型號 製造商 描述 庫存 價格
BSC070N10NS3GATMA1
DISTI # V72:2272_06383503
Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4188
  • 3000:$0.6068
  • 1000:$0.6130
  • 500:$0.7507
  • 250:$0.8361
  • 100:$0.8454
  • 25:$1.0488
  • 10:$1.0616
  • 1:$1.2038
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.7037
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.8175
  • 500:$1.0354
  • 100:$1.3352
  • 10:$1.6890
  • 1:$1.9100
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.8175
  • 500:$1.0354
  • 100:$1.3352
  • 10:$1.6890
  • 1:$1.9100
BSC070N10NS3GATMA1
DISTI # 31308611
Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4188
  • 12:$1.2038
BSC070N10NS3GATMA1
DISTI # BSC070N10NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 90A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC070N10NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.5539
  • 10000:$0.5339
  • 20000:$0.5149
  • 30000:$0.4969
  • 50000:$0.4879
BSC070N10NS3GATMA1
DISTI # 47Y7995
Infineon Technologies AGMOSFET Transistor, N Channel, 90 A, 100 V, 0.0063 ohm, 10 V, 2.7 V RoHS Compliant: Yes0
  • 1:$1.5800
  • 10:$1.3500
  • 25:$1.2500
  • 50:$1.1400
  • 100:$1.0400
  • 250:$0.9770
  • 500:$0.9140
  • 1000:$0.7220
BSC070N10NS3GATMA1.
DISTI # 27AC1074
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0063ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:114W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.5540
  • 10000:$0.5340
  • 20000:$0.5150
  • 30000:$0.4970
  • 50000:$0.4880
BSC070N10NS3 G
DISTI # 726-BSC070N10NS3G
Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
RoHS: Compliant
208
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9140
  • 1000:$0.7220
BSC070N10NS3GATMA1
DISTI # 726-BSC070N10NS3GATM
Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
RoHS: Compliant
197
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9140
  • 1000:$0.7220
BSC070N10NS3GATMA1
DISTI # 9064359P
Infineon Technologies AGMOSFET N-CHANNEL 100V 90A OPTIMOS TDSON, RL4750
  • 50:£0.8650
  • 250:£0.7530
  • 500:£0.6610
  • 1250:£0.5220
BSC070N10NS3GATMA1
DISTI # 2443421
Infineon Technologies AGMOSFET, N CH, 100V, 90A, TDSON-8
RoHS: Compliant
7454
  • 5:£0.9400
  • 25:£0.8490
  • 100:£0.6620
  • 250:£0.6050
  • 500:£0.5470
BSC070N10NS3GATMA1
DISTI # C1S322000595923
Infineon Technologies AGTrans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4688
  • 10:$1.0693
BSC070N10NS3GATMA1
DISTI # 2443421
Infineon Technologies AGMOSFET, N CH, 100V, 90A, TDSON-8
RoHS: Compliant
7172
  • 1:$2.5000
  • 10:$2.1400
  • 100:$1.6500
  • 500:$1.4500
  • 1000:$1.1500
  • 5000:$1.1400
圖片 型號 描述
NCP301LSN27T1G

Mfr.#: NCP301LSN27T1G

OMO.#: OMO-NCP301LSN27T1G

Supervisory Circuits 2.7V Detector w/Reset Low
LL4148

Mfr.#: LL4148

OMO.#: OMO-LL4148

Diodes - General Purpose, Power, Switching Small Signal Diode
VS-30CTH02S-M3

Mfr.#: VS-30CTH02S-M3

OMO.#: OMO-VS-30CTH02S-M3

Rectifiers 200V 30A TO-263 Fred Pt
FDMA86251

Mfr.#: FDMA86251

OMO.#: OMO-FDMA86251

MOSFET FET 150V 175.0 MOHM MLP22
BSC160N10NS3GATMA1

Mfr.#: BSC160N10NS3GATMA1

OMO.#: OMO-BSC160N10NS3GATMA1

MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
BSC037N08NS5ATMA1

Mfr.#: BSC037N08NS5ATMA1

OMO.#: OMO-BSC037N08NS5ATMA1

MOSFET N-Ch 80V 100A TDSON-8
RC0603FR-071KL

Mfr.#: RC0603FR-071KL

OMO.#: OMO-RC0603FR-071KL

Thick Film Resistors - SMD 1K OHM 1%
BLM18PG121SN1D

Mfr.#: BLM18PG121SN1D

OMO.#: OMO-BLM18PG121SN1D

Ferrite Beads 0603 120 OHM
LL4148

Mfr.#: LL4148

OMO.#: OMO-LL4148-ON-SEMICONDUCTOR

DIODE GEN PURP 100V 200MA SOD80
BLM18PG121SN1D

Mfr.#: BLM18PG121SN1D

OMO.#: OMO-BLM18PG121SN1D-MURATA-ELECTRONICS

EMI Filter Beads, Chips & Arrays 0603 120 OHM
可用性
庫存:
17
訂購:
2000
輸入數量:
BSC070N10NS3GATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$1.57
US$1.57
10
US$1.34
US$13.40
100
US$1.03
US$103.00
500
US$0.91
US$457.00
1000
US$0.72
US$722.00
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