SIDR668DP-T1-GE3

SIDR668DP-T1-GE3
Mfr. #:
SIDR668DP-T1-GE3
製造商:
Vishay
描述:
MOSFET N-CH 100V
生命週期:
製造商新產品
數據表:
SIDR668DP-T1-GE3 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
SIDR668DP-T1-GE3 更多信息
產品屬性
屬性值
Tags
SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型號 製造商 描述 庫存 價格
SIDR668DP-T1-GE3
DISTI # 29499188
Vishay IntertechnologiesN-Channel 100 V (D-S) MOSFET3000
  • 3000:$1.4091
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5839In Stock
  • 1000:$1.4819
  • 500:$1.7885
  • 100:$2.1769
  • 10:$2.7080
  • 1:$3.0100
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5839In Stock
  • 1000:$1.4819
  • 500:$1.7885
  • 100:$2.1769
  • 10:$2.7080
  • 1:$3.0100
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 6000:$1.3230
  • 3000:$1.3395
SIDR668DP-T1-GE3
DISTI # 59AC7340
Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
  • 10000:$1.1900
  • 6000:$1.2300
  • 4000:$1.2800
  • 2000:$1.4200
  • 1000:$1.5000
  • 1:$1.5900
SIDR668DP-T1-GE3
DISTI # 78AC6505
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes0
  • 500:$1.6700
  • 250:$1.7900
  • 100:$1.9100
  • 50:$2.0900
  • 25:$2.2700
  • 10:$2.4500
  • 1:$2.9600
SIDR668DP-T1-GE3
DISTI # 78-SIDR668DP-T1-GE3
Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant
9739
  • 1:$2.9300
  • 10:$2.4300
  • 100:$1.8900
  • 500:$1.6500
  • 1000:$1.3700
  • 3000:$1.2700
  • 6000:$1.2200
SIDR668DP-T1-GE3
DISTI # 2932900
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W6000
  • 500:£1.2100
  • 250:£1.3000
  • 100:£1.3800
  • 10:£1.7800
  • 1:£2.4200
SIDR668DP-T1-GE3
DISTI # 2932900
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W
RoHS: Compliant
6000
  • 1000:$2.5300
  • 500:$2.6800
  • 250:$2.8400
  • 100:$3.1000
  • 10:$3.5700
  • 1:$4.1000
圖片 型號 描述
SIDR668DP-T1-GE3

Mfr.#: SIDR668DP-T1-GE3

OMO.#: OMO-SIDR668DP-T1-GE3

MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
SIDR668DP-T1-GE3

Mfr.#: SIDR668DP-T1-GE3

OMO.#: OMO-SIDR668DP-T1-GE3-VISHAY

MOSFET N-CH 100V
可用性
庫存:
Available
訂購:
5000
輸入數量:
SIDR668DP-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$1.78
US$1.78
10
US$1.70
US$16.96
100
US$1.61
US$160.65
500
US$1.52
US$758.65
1000
US$1.43
US$1 428.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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