SCT3120ALGC11

Mfr. #:: SCT3120ALGC11
製造商:: Rohm Semiconductor
描述:: MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS
生命週期:: 製造商新產品
數據表:: SCT3120ALGC11 數據表
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更多信息:: SCT3120ALGC11 更多信息

產品屬性
屬性值

製造商：: 羅姆半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 碳化矽

安裝方式：: 通孔

包裝/案例：: TO-247N-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 650 V

Id - 連續漏極電流：: 21 A

Rds On - 漏源電阻：: 120 mOhms

Vgs th - 柵源閾值電壓：: 2.7 V

Vgs - 柵源電壓：: - 4 V, 22 V

Qg - 門電荷：: 38 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

Pd - 功耗：: 103 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

系列：: SCT3x

晶體管類型：: 1 N-Channel

品牌：: 羅姆半導體

正向跨導 - 最小值：: 2.7 S

秋季時間：: 14 ns

產品類別：: MOSFET

上升時間：: 21 ns

出廠包裝數量：: 450

子類別：: MOSFET

典型關斷延遲時間：: 23 ns

典型的開啟延遲時間：: 14 ns

第 # 部分別名：: SCT3120AL

單位重量：: 0.211644 oz

Tags: SCT31, SCT3, SCT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SCT3120ALGC11 描述

***ure Electronics: SCT3120AL Series 650 V 21 A 156 mOhm N-Channel SiC Power Mosfet - TO-247N

***ical: Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube

***et: N-CHANNEL SILICON CARBIDE POWER MOSFET 650V/21A

SCT3120ALGC11 更多信息

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

SCT3x 3rd Generation SiC Trench MOSFETs: ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.

N-Channel SiC Power MOSFETs: ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.

Industrial Product Solutions: ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.

Market price

型號	製造商	描述	庫存	價格
SCT3120ALGC11 DISTI # V99:2348_18341079	ROHM Semiconductor	SCT3120ALGC11	224	250:$5.2180 100:$5.4130 25:$6.2000 10:$6.4710 1:$7.9475
SCT3120ALGC11 DISTI # SCT3120ALGC11-ND	ROHM Semiconductor	MOSFET NCH 650V 21A TO247N RoHS: Compliant Min Qty: 1 Container: Tube	3317In Stock	510:$4.7275 120:$5.4290 30:$6.2527 10:$6.5580 1:$7.2600
SCT3120ALGC11 DISTI # 26098907	ROHM Semiconductor	SCT3120ALGC11	224	2:$7.9475
SCT3120ALGC11 DISTI # SCT3120ALGC11	ROHM Semiconductor	N-CHANNEL SILICON CARBIDE POWER MOSFET 650V/21A - Rail/Tube (Alt: SCT3120ALGC11) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 5800	4500:$3.8900 2250:$3.9900 1350:$4.1900 900:$4.4900 450:$4.7900
SCT3120ALGC11 DISTI # SCT3120ALGC11	ROHM Semiconductor	N-CHANNEL SILICON CARBIDE POWER MOSFET 650V/21A (Alt: SCT3120ALGC11) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€5.4900 500:€5.8900 100:€6.0900 50:€6.2900 25:€6.5900 10:€6.7900 1:€7.4900
SCT3120ALGC11 DISTI # 05AC9466	ROHM Semiconductor	MOSFET, N-CH, 650V, 21A, TO-247N,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,Power RoHS Compliant: Yes	35	500:$6.4000 250:$6.6200 100:$7.8800 50:$8.4400 25:$9.0600 10:$9.9600 1:$11.0600
SCT3120ALGC11. DISTI # 32AC3229	ROHM Semiconductor	Operating Temperature Max:175°C,Product Range:-,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes	4900	500:$6.4000 250:$6.6200 100:$7.8800 50:$8.4400 25:$9.0600 10:$9.9600 1:$11.0600
SCT3120ALGC11 DISTI # 755-SCT3120ALGC11	ROHM Semiconductor	MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS RoHS: Compliant	3138	1:$7.2500 10:$6.5500 25:$6.2500 100:$5.4200 250:$5.1800
SCT3120ALGC11 DISTI # 1501488	ROHM Semiconductor	MOSFET N-CHANNEL 21A 650V SIC TO-247, EA	15	50:£4.6200 12:£4.7100 6:£4.8900 3:£5.0300 1:£5.2400
SCT3120ALGC11	ROHM Semiconductor		239	229:$8.0320 109:$8.7850 1:$11.2950
SCT3120ALGC11 DISTI # SCT3120ALGC11	ROHM Semiconductor	SiC-N-Ch 650V 21A 103W 0,156R TO247 RoHS: Compliant	445	1:€8.4500 5:€7.2500 10:€6.6500 30:€6.4300
SCT3120ALGC11 DISTI # TMOS1325	ROHM Semiconductor	SiC-N 650V 120mOhm 21A TO247 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	450:$7.1300
SCT3120ALGC11	ROHM Semiconductor	RoHS(ship within 1day)	299	1:$7.2300 10:$6.1400 50:$5.4200 100:$5.2000 500:$5.1300 1000:$5.0200
SCT3120ALGC11	ROHM Semiconductor	MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS RoHS: Compliant	Americas - 390
SCT3120ALGC11 DISTI # 2678787	ROHM Semiconductor	MOSFET, N-CH, 650V, 21A, TO-247N RoHS: Compliant	35	500:$11.3800 250:$11.9600 100:$12.6100 25:$13.3400 10:$15.0800 1:$16.1300
SCT3120ALGC11 DISTI # 2678787	ROHM Semiconductor	MOSFET, N-CH, 650V, 21A, TO-247N	116	100:£5.2200 50:£5.4400 10:£5.6500 5:£5.8700 1:£6.4300

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