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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| IPB107N20N3 G DISTI # IPB107N20N3 G | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin TO-263 T/R (Alt: IPB107N20N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Asia - 0 | |
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB107N20N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB107N20N3GATMA1 DISTI # 79X1432 | Infineon Technologies AG | MOSFET, N-CH, 200V, 88A, TO-263- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:88A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0096ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes | 0 |
|
| IPB107N20N3 G DISTI # 726-IPB107N20N3GXT | Infineon Technologies AG | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 RoHS: Compliant | 0 |
|
| IPB107N20N3GATMA1 DISTI # 726-IPB107N20N3GATMA | Infineon Technologies AG | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 RoHS: Compliant | 0 |
|
| IPB107N20N3GATMA1 DISTI # 7545434 | Infineon Technologies AG | MOSFET N-CHANNEL 200V 88A TO263, EA | 6 |
|
| IPB107N20N3G | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 865 |
|
| IPB107N20N3 G | Infineon Technologies AG | INSTOCK | 25762 | |
| IPB107N20N3GATMA1 DISTI # 2432725RL | Infineon Technologies AG | MOSFET, N CH, 200V, 88A, TO-263-3 RoHS: Compliant | 0 |
|
| IPB107N20N3GATMA1 DISTI # 2432725 | Infineon Technologies AG | MOSFET, N CH, 200V, 88A, TO-263-3 RoHS: Compliant | 0 |
|
| IPB107N20N3GATMA1 DISTI # 2432725 | Infineon Technologies AG | MOSFET, N CH, 200V, 88A, TO-263-3 RoHS: Compliant | 0 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: IPB107N20NAXT OMO.#: OMO-IPB107N20NAXT |
MOSFET N-Ch 200V 88A D2PAK-2 |
|
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Mfr.#: IPB107N20NA OMO.#: OMO-IPB107N20NA |
MOSFET N-Ch 200V 88A D2PAK-2 |
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|
Mfr.#: IPB107N20NAATMA1 OMO.#: OMO-IPB107N20NAATMA1 |
MOSFET Mosfet, DCtoDC Nchannel 200V |
|
Mfr.#: IPB107N20N3G OMO.#: OMO-IPB107N20N3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
|
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Mfr.#: IPB107N20N3 OMO.#: OMO-IPB107N20N3-1190 |
全新原裝 |
|
|
Mfr.#: IPB107N20N3 G OMO.#: OMO-IPB107N20N3-G-1190 |
Trans MOSFET N-CH 200V 88A 3-Pin TO-263 T/R (Alt: IPB107N20N3 G) |
|
|
Mfr.#: IPB107N20N3G , 2SD1949K- |
全新原裝 |
|
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Mfr.#: IPB107N20N3G 0.2W OMO.#: OMO-IPB107N20N3G-0-2W-1190 |
全新原裝 |
|
|
Mfr.#: IPB107N20NA OMO.#: OMO-IPB107N20NA-1190 |
- Bulk (Alt: IPB107N20NA) |
|
Mfr.#: IPB107N20NAATMA1 |
MOSFET N-CH 200V 88A TO263-3 |