 | | | |
| PartNumber | IPB107N20NA | IPB107N20N3 G | IPB107N20N3GATMA1 |
| Description | MOSFET N-Ch 200V 88A D2PAK-2 | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | PG-TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
| Id Continuous Drain Current | 88 A | 88 A | 88 A |
| Rds On Drain Source Resistance | 9.6 mOhms | 9.6 mOhms | 10.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
| Qg Gate Charge | 87 nC | 87 nC | 65 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 300 W | 300 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 11 ns | 11 ns | 11 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 26 ns | 26 ns | 26 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 41 ns | 41 ns | 41 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns | 18 ns |
| Part # Aliases | IPB107N20NAATMA1 IPB17N2NAXT SP000877674 | IPB107N20N3GATMA1 IPB17N2N3GXT SP000676406 | G IPB107N20N3 IPB17N2N3GXT SP000676406 |
| Unit Weight | 0.077603 oz | 0.139332 oz | 0.068654 oz |
| Forward Transconductance Min | - | 71 S | 71 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB107N20NAXT | MOSFET N-Ch 200V 88A D2PAK-2 | |
| IPB107N20NA | MOSFET N-Ch 200V 88A D2PAK-2 | ||
| IPB107N20N3 G | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | ||
| IPB107N20N3GATMA1 | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | ||
| IPB107N20NAATMA1 | MOSFET Mosfet, DCtoDC Nchannel 200V | ||
| IPB107N20N3GATMA1 | MOSFET N-CH 200V 88A TO263-3 | ||
| IPB107N20NAATMA1 | MOSFET N-CH 200V 88A TO263-3 | ||
| IPB107N20N3G | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | ||
| IPB107N20NAXT | MOSFET N-Ch 200V 88A D2PAK-2 | ||
| IPB107N20 | 全新原裝 | ||
| IPB107N20N3 | 全新原裝 | ||
| IPB107N20N3 G | Trans MOSFET N-CH 200V 88A 3-Pin TO-263 T/R (Alt: IPB107N20N3 G) | ||
| IPB107N20N3G 107N20N | 全新原裝 | ||
| IPB107N20N3G , 2SD1949K- | 全新原裝 | ||
| IPB107N20N3G 0.2W | 全新原裝 | ||
| IPB107N20N3GS | 全新原裝 | ||
| IPB107N20N3GXT | 全新原裝 | ||
| IPB107N20NA | - Bulk (Alt: IPB107N20NA) | ||
| IPB107N20NA 107N20NA | 全新原裝 |