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FCD9N60NTM

FCD9N60NTM
Mfr. #:
FCD9N60NTM
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V N-Channel SupreMOS
生命週期:
製造商新產品
數據表:
FCD9N60NTM 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
9 A
Rds On - 漏源電阻：
330 mOhms
Vgs th - 柵源閾值電壓：
5 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
17.8 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
92.6 W
配置：
單身的
商品名：
超級MOS
打包：
捲軸
高度：
2.39 mm
長度：
6.73 mm
系列：
FCD9N60NTM
晶體管類型：
1 N-Channel
類型：
N 溝道 MOSFET
寬度：
6.22 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
5.3 S
秋季時間：
11.5 ns
產品類別：
MOSFET
上升時間：
9.6 ns
出廠包裝數量：
2500
子類別：
MOSFET
典型關斷延遲時間：
28.7 ns
典型的開啟延遲時間：
13.2 ns
單位重量：
0.009184 oz
Tags
FCD9N6, FCD9N, FCD9, FCD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK
*** Source Electronics
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 9A DPAK
***r Electronics
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET,N CH,600V,9A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
***ment14 APAC
MOSFET, N-CH, 600V, 11A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Source Voltage Vds:600V; On Resistance
***roFlash
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 600V, 11A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
***Yang
Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R - Product that comes on tape, but is not reeled
***nell
MOSFET, N-CH, 600V, 10.2A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5
*** Stop Electro
Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package
***ure Electronics
N-Channel 600 V 0.38 Ohm SMT FDmesh II Power Mosfet - DPAK
***nell
MOSFET, N-CH, 600V, 11A, 109W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 109W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***r Electronics
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***icroelectronics
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
*** Source Electronics
MOSFET N-CH 600V 11A DPAK / Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R
***nell
MOSFET, N-CH, 600V, 11A, 110W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***r Electronics
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK
***ure Electronics
N-Channel 600 V 0.6 Ohm Surface Mount SuperFET Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N, 600V D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:7A; Package / Case:DPAK; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:21A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK
***ure Electronics
N-Channel 600 V 0.6 Ohm 30 nC Surface Mount SuperFET Mosfet -TO-252-3
***r Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
Aluminum Electrolytic Capacitors 100μF Radial, Can - SMD ±20% Tape & Reel (TR) FP 0.303 7.70mm Surface Mount Automotive CAP ALUM 100UF 20% 35V SMD
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
型號 製造商 描述 庫存 價格
FCD9N60NTM
DISTI # V79:2366_23246337		ON SemiconductorSUPREMOS 9A, IN D-PAK1205
  • 500:$1.1926
  • 100:$1.2780
  • 10:$1.5949
  • 1:$2.0585
FCD9N60NTM
DISTI # V72:2272_06337712		ON SemiconductorSUPREMOS 9A, IN D-PAK1201
  • 1000:$0.9275
  • 500:$1.0021
  • 250:$1.1135
  • 100:$1.2372
  • 25:$1.4308
  • 10:$1.5897
  • 1:$2.0507
FCD9N60NTM
DISTI # V36:1790_06337712		ON SemiconductorSUPREMOS 9A, IN D-PAK0
  • 2500000:$0.7471
  • 1250000:$0.7476
  • 250000:$0.7965
  • 25000:$0.8926
  • 2500:$0.9092
FCD9N60NTM
DISTI # FCD9N60NTMCT-ND		ON SemiconductorMOSFET N-CH 600V 9A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3504In Stock
  • 1000:$1.0058
  • 500:$1.2139
  • 100:$1.4775
  • 10:$1.8380
  • 1:$2.0500
FCD9N60NTM
DISTI # FCD9N60NTMDKR-ND		ON SemiconductorMOSFET N-CH 600V 9A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3504In Stock
  • 1000:$1.0058
  • 500:$1.2139
  • 100:$1.4775
  • 10:$1.8380
  • 1:$2.0500
FCD9N60NTM
DISTI # FCD9N60NTMTR-ND		ON SemiconductorMOSFET N-CH 600V 9A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 5000:$0.8755
  • 2500:$0.9092
FCD9N60NTM
DISTI # 33066007		ON SemiconductorSUPREMOS 9A, IN D-PAK2500
  • 2500:$1.3125
FCD9N60NTM
DISTI # 33728979		ON SemiconductorSUPREMOS 9A, IN D-PAK2500
  • 2500:$0.8556
FCD9N60NTM
DISTI # 32380076		ON SemiconductorSUPREMOS 9A, IN D-PAK1205
  • 6:$2.0585
FCD9N60NTM
DISTI # 25921864		ON SemiconductorSUPREMOS 9A, IN D-PAK1201
  • 8:$2.0507
FCD9N60NTM
DISTI # FCD9N60NTM		ON SemiconductorTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R (Alt: FCD9N60NTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 5000
  • 5000:$0.1924
  • 2500:$0.1926
FCD9N60NTM
DISTI # FCD9N60NTM		ON SemiconductorTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FCD9N60NTM)
RoHS: Not Compliant
Min Qty: 329
Container: Bulk		Americas - 0
  • 3290:$0.9379
  • 1645:$0.9619
  • 987:$0.9739
  • 658:$0.9869
  • 329:$0.9929
FCD9N60NTM
DISTI # FCD9N60NTM		ON SemiconductorTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FCD9N60NTM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.7909
  • 15000:$0.8109
  • 10000:$0.8219
  • 5000:$0.8319
  • 2500:$0.8379
FCD9N60NTM
DISTI # FCD9N60NTM		ON SemiconductorTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R (Alt: FCD9N60NTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.7429
  • 15000:€0.7959
  • 10000:€0.8579
  • 5000:€0.9289
  • 2500:€1.1149
FCD9N60NTM
DISTI # 92R5506		ON SemiconductorPower MOSFET, N Channel, 9 A, 600 V, 0.33 ohm, 10 V, 3 V0
  • 25000:$0.8690
  • 10000:$0.8980
  • 2500:$0.9330
  • 1:$0.9400
FCD9N60NTM
DISTI # 41T0481		ON SemiconductorMOSFET,N CHANNEL,600V,9A,DPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.33ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3Pins RoHS Compliant: Yes3546
  • 1000:$1.1000
  • 500:$1.2900
  • 250:$1.3700
  • 100:$1.4500
  • 50:$1.5600
  • 25:$1.6700
  • 10:$1.7800
  • 1:$2.0600
FCD9N60NTM
DISTI # 512-FCD9N60NTM		ON SemiconductorMOSFET 600V N-Channel SupreMOS
RoHS: Compliant		2876
  • 1:$1.8800
  • 10:$1.6000
  • 100:$1.2800
  • 500:$1.1200
  • 1000:$0.9290
  • 2500:$0.8650
  • 5000:$0.8330
FCD9N60NTMON SemiconductorSingle N-Channel 600 V 92.6 W 17.8 nC Silicon Surface Mount Mosfet - TO-252-3
RoHS: Compliant		2500Reel
  • 2500:$0.8000
FCD9N60NTMON SemiconductorPower Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		2500
  • 1000:$0.9300
  • 500:$0.9800
  • 100:$1.0200
  • 25:$1.0700
  • 1:$1.1500
FCD9N60NTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		54360
  • 1000:$0.9300
  • 500:$0.9800
  • 100:$1.0200
  • 25:$1.0700
  • 1:$1.1500
FCD9N60NTMFairchild Semiconductor Corporation9 A, 600 V, 0.385 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-25221
  • 12:$1.8000
  • 3:$2.2500
  • 1:$2.7000
FCD9N60NTM
DISTI # 7396128P		ON SemiconductorSUPREMOS MOSFET N CHANNEL 600V 9A, RL1358
  • 5:£0.9000
FCD9N60NTM
DISTI # 1885780		ON SemiconductorMOSFET,N CH,600V,9A,DPAK
RoHS: Compliant		3546
  • 5000:$1.2900
  • 2500:$1.3300
  • 1000:$1.4300
  • 500:$1.7300
  • 100:$1.9700
  • 10:$2.4600
  • 1:$2.8900
FCD9N60NTM
DISTI # 1885780RL		ON SemiconductorMOSFET,N CH,600V,9A,DPAK
RoHS: Compliant		0
  • 5000:$1.2900
  • 2500:$1.3300
  • 1000:$1.4300
  • 500:$1.7300
  • 100:$1.9700
  • 10:$2.4600
  • 1:$2.8900
FCD9N60NTM
DISTI # 1885780		ON SemiconductorMOSFET,N CH,600V,9A,DPAK4414
  • 500:£0.8630
  • 250:£0.9260
  • 100:£0.9890
  • 10:£1.2600
  • 1:£1.6400
FCD9N60NTM
DISTI # XSKDRABV0051313		ON SEMICONDUCTOR 
RoHS: Compliant		7500 in Stock0 on Order
  • 7500:$1.2000
  • 2500:$1.2800
圖片 型號 描述
ESDM3551N2T5G

Mfr.#: ESDM3551N2T5G

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STB45N50DM2AG

Mfr.#: STB45N50DM2AG

OMO.#: OMO-STB45N50DM2AG

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STD20NF20

Mfr.#: STD20NF20

OMO.#: OMO-STD20NF20

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ADG1413YRUZ

Mfr.#: ADG1413YRUZ

OMO.#: OMO-ADG1413YRUZ

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ADP7158ACPZ-1.8-R7

Mfr.#: ADP7158ACPZ-1.8-R7

OMO.#: OMO-ADP7158ACPZ-1-8-R7

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C3216X8L1C106K160AC

Mfr.#: C3216X8L1C106K160AC

OMO.#: OMO-C3216X8L1C106K160AC

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 16V 10uF 10% X8L High Temp
CCS811B-JOPD500

Mfr.#: CCS811B-JOPD500

OMO.#: OMO-CCS811B-JOPD500-AMS

 LOW POWER DIGITAL SENSOR FOR IND
STD20NF20

Mfr.#: STD20NF20

OMO.#: OMO-STD20NF20-STMICROELECTRONICS

 MOSFET N-CH 200V 18A DPAK
STB45N50DM2AG

Mfr.#: STB45N50DM2AG

OMO.#: OMO-STB45N50DM2AG-STMICROELECTRONICS

 MOSFET N-CH 500V 35A
ADP7158ACPZ-1.8-R7

Mfr.#: ADP7158ACPZ-1.8-R7

OMO.#: OMO-ADP7158ACPZ-1-8-R7-ANALOG-DEVICES-INC-ADI

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可用性
庫存:
Available
訂購:
1985
輸入數量:
FCD9N60NTM的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.88
US$1.88
10
US$1.60
US$16.00
100
US$1.28
US$128.00
500
US$1.12
US$560.00
1000
US$0.93
US$929.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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