FCD9

FCD900N60Z vs FCD900N60 vs FCD900N60ZM

 
PartNumberFCD900N60ZFCD900N60FCD900N60ZM
DescriptionMOSFET 600V N-Channel MOSFET
ManufacturerON Semiconductor-FSC
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance900 mOhms--
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
TradenameSuperFET II--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
ProductMOSFET--
SeriesFCD900N60Z--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4.6 S--
Fall Time11.9 ns--
Product TypeMOSFET--
Rise Time5.2 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33.6 ns--
Typical Turn On Delay Time10.9 ns--
Unit Weight0.009184 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCD900N60Z MOSFET 600V N-Channel MOSFET
FCD9N60NTM MOSFET 600V N-Channel SupreMOS
FCD900N60 全新原裝
FCD900N60ZM 全新原裝
FCD9N60N 全新原裝
FCD9N60TM 全新原裝
FCD9N90NTM 全新原裝
ON Semiconductor
ON Semiconductor
FCD900N60Z MOSFET N-CH 600V 4.5A TO-252-3
FCD9N60NTM MOSFET N-CH 600V 9A DPAK
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