T1G2028536-FS

T1G2028536-FS
Mfr. #:
T1G2028536-FS
製造商:
Qorvo
描述:
RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
生命週期:
製造商新產品
數據表:
T1G2028536-FS 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
T1G2028536-FS 更多信息
產品屬性
屬性值
製造商:
科沃
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵碳化矽
獲得:
18 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
36 V
Vgs - 柵源擊穿電壓:
145 V
Id - 連續漏極電流:
24 A
輸出功率:
260 W
最大漏柵電壓:
48 V
最高工作溫度:
+ 250 C
Pd - 功耗:
288 W
安裝方式:
貼片/貼片
打包:
托盤
配置:
單身的
工作頻率:
2 GHz
產品:
射頻功率晶體管
系列:
T1G
類型:
氮化鎵碳化矽 HEMT
品牌:
科沃
濕氣敏感:
是的
產品類別:
射頻 JFET 晶體管
出廠包裝數量:
25
子類別:
晶體管
第 # 部分別名:
1110346
Tags
T1G2028536, T1G2, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型號 製造商 描述 庫存 價格
T1G2028536-FS
DISTI # 772-T1G2028536-FS
QorvoRF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
RoHS: Compliant
25
  • 1:$508.0000
圖片 型號 描述
T1G2028536-FS

Mfr.#: T1G2028536-FS

OMO.#: OMO-T1G2028536-FS

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FL

Mfr.#: T1G2028536-FL

OMO.#: OMO-T1G2028536-FL

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FL

Mfr.#: T1G2028536-FL

OMO.#: OMO-T1G2028536-FL-318

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FS

Mfr.#: T1G2028536-FS

OMO.#: OMO-T1G2028536-FS-318

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FL/FS 1.2-1.4GHz EVB5

Mfr.#: T1G2028536-FL/FS 1.2-1.4GHz EVB5

OMO.#: OMO-T1G2028536-FL-FS-1-2-1-4GHZ-EVB5-1152

RF Development Tools DC-2GHz P3dB 260W Eval Board
T1G2028535-FL

Mfr.#: T1G2028535-FL

OMO.#: OMO-T1G2028535-FL-1190

全新原裝
可用性
庫存:
25
訂購:
2008
輸入數量:
T1G2028536-FS的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$508.00
US$508.00
25
US$468.17
US$11 704.25
從...開始
Top