 |  | | |
| PartNumber | T1G2028536-FL | T1G2028536-FL/FS 1.2-1.4GHz EVB5 | T1G2028535-FL |
| Description | RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN | RF Development Tools DC-2GHz P3dB 260W Eval Board | |
| Manufacturer | Qorvo | - | - |
| Product Category | RF JFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN SiC | - | - |
| Gain | 20.8 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 36 V | - | - |
| Vgs Gate Source Breakdown Voltage | 145 V | - | - |
| Id Continuous Drain Current | 24 A | - | - |
| Output Power | 260 W | - | - |
| Maximum Drain Gate Voltage | 48 V | - | - |
| Maximum Operating Temperature | + 275 C | - | - |
| Pd Power Dissipation | 288 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Packaging | Tray | - | - |
| Configuration | Single | - | - |
| Operating Frequency | 2 GHz | - | - |
| Product | RF Power Transistor | - | - |
| Series | T1G | - | - |
| Type | GaN SiC HEMT | - | - |
| Brand | Qorvo | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 1111394 | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Qorvo |
T1G2028536-FS | RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN | |
| T1G2028536-FL | RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN | ||
| T1G2028536-FL | RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN | ||
| T1G2028536-FS | RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN | ||
| T1G2028536-FL/FS 1.2-1.4GHz EVB5 | RF Development Tools DC-2GHz P3dB 260W Eval Board | ||
| T1G2028535-FL | 全新原裝 |