IRF7379TRPBF

IRF7379TRPBF
Mfr. #:
IRF7379TRPBF
製造商:
Infineon Technologies
描述:
MOSFET N/P-CH 30V 8-SOIC
生命週期:
製造商新產品
數據表:
IRF7379TRPBF 數據表
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ECAD Model:
更多信息:
IRF7379TRPBF 更多信息
產品屬性
屬性值
製造商
英飛凌科技
產品分類
FET - 陣列
系列
十六進制
打包
Digi-ReelR 替代包裝
單位重量
0.019048 oz
安裝方式
貼片/貼片
包裝盒
8-SOIC (0.154", 3.90mm Width)
技術
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
通道數
2 Channel
供應商-設備-包
8-SO
配置
1 N-Channel 1 P-Channel
FET型
N 和 P 溝道
最大功率
2.5W
晶體管型
1 N-Channel 1 P-Channel
漏源電壓 Vdss
30V
輸入電容-Ciss-Vds
520pF @ 25V
FET-Feature
標準
Current-Continuous-Drain-Id-25°C
5.8A, 4.3A
Rds-On-Max-Id-Vgs
45 mOhm @ 5.8A, 10V
Vgs-th-Max-Id
1V @ 250μA
柵極電荷-Qg-Vgs
25nC @ 10V
鈀功耗
2.5 W
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
5.8 A
Vds-漏-源-擊穿電壓
30 V
Rds-On-Drain-Source-Resistance
75 mOhms
晶體管極性
N 溝道 P 溝道
Qg-門電荷
16.7 nC
Tags
IRF7379, IRF737, IRF73, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型號 製造商 描述 庫存 價格
IRF7379TRPBF
DISTI # IRF7379PBFCT-ND
Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3018In Stock
  • 1000:$0.4305
  • 500:$0.5382
  • 100:$0.7266
  • 10:$0.9420
  • 1:$1.0800
IRF7379TRPBF
DISTI # IRF7379PBFDKR-ND
Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3018In Stock
  • 1000:$0.4305
  • 500:$0.5382
  • 100:$0.7266
  • 10:$0.9420
  • 1:$1.0800
IRF7379TRPBF
DISTI # IRF7379PBFTR-ND
Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4000:$0.3788
IRF7379TRPBF
DISTI # IRF7379TRPBF
Infineon Technologies AGTrans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7379TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.2729
  • 8000:$0.2629
  • 16000:$0.2539
  • 24000:$0.2449
  • 40000:$0.2409
IRF7379TRPBF
DISTI # 34AC1779
Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC,Transistor Polarity:N and P Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes3390
  • 1:$0.8900
  • 10:$0.7370
  • 25:$0.6500
  • 50:$0.5620
  • 100:$0.4750
  • 250:$0.4430
  • 500:$0.4120
  • 1000:$0.3800
IRF7379TRPBF
DISTI # 70018897
Infineon Technologies AGMOSFET,DUAL N/P-CHANNEL,30V,5.8A,SO-8
RoHS: Compliant
0
  • 4000:$1.2600
  • 8000:$1.2350
  • 20000:$1.1970
  • 40000:$1.1470
  • 100000:$1.0710
IRF7379TRPBF
DISTI # 942-IRF7379TRPBF
Infineon Technologies AGMOSFET MOSFT DUAL N/PCh 30V 5.8A
RoHS: Compliant
3835
  • 1:$0.8900
  • 10:$0.7370
  • 100:$0.4750
  • 1000:$0.3800
  • 4000:$0.3210
  • 8000:$0.3090
  • 24000:$0.2970
IRF7379TRPBF
DISTI # 2781211
Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC
RoHS: Compliant
3390
  • 5:$1.2300
  • 25:$1.0700
  • 100:$0.8750
  • 250:$0.7390
  • 500:$0.6400
  • 1000:$0.6050
  • 5000:$0.5730
IRF7379TRPBF
DISTI # 2781211
Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC
RoHS: Compliant
3390
  • 5:£0.8360
  • 25:£0.7520
  • 100:£0.5790
  • 250:£0.5040
  • 500:£0.4290
圖片 型號 描述
IRF7379TRPBF

Mfr.#: IRF7379TRPBF

OMO.#: OMO-IRF7379TRPBF

MOSFET MOSFT DUAL N/PCh 30V 5.8A
IRF737LCPBF

Mfr.#: IRF737LCPBF

OMO.#: OMO-IRF737LCPBF

MOSFET N-Chan 300V 6.1 Amp
IRF7379PBF

Mfr.#: IRF7379PBF

OMO.#: OMO-IRF7379PBF

MOSFET 30V DUAL N / P CH 20V VGS MAX
IRF7379

Mfr.#: IRF7379

OMO.#: OMO-IRF7379-INFINEON-TECHNOLOGIES

MOSFET N/P-CH 30V 8-SOIC
IRF7379TR

Mfr.#: IRF7379TR

OMO.#: OMO-IRF7379TR-INFINEON-TECHNOLOGIES

MOSFET N/P-CH 30V 8-SOIC
IRF737LCL

Mfr.#: IRF737LCL

OMO.#: OMO-IRF737LCL-VISHAY

MOSFET N-CH 300V 6.1A TO-262
IRF737LCSTRL

Mfr.#: IRF737LCSTRL

OMO.#: OMO-IRF737LCSTRL-VISHAY

MOSFET N-CH 300V 6.1A D2PAK
IRF7379PBF

Mfr.#: IRF7379PBF

OMO.#: OMO-IRF7379PBF-INFINEON-TECHNOLOGIES

MOSFET N/P-CH 30V 8-SOIC
IRF7379QTRPBF.

Mfr.#: IRF7379QTRPBF.

OMO.#: OMO-IRF7379QTRPBF--1190

全新原裝
IRF737LC

Mfr.#: IRF737LC

OMO.#: OMO-IRF737LC-VISHAY

MOSFET N-CH 300V 6.1A TO-220AB
可用性
庫存:
Available
訂購:
3500
輸入數量:
IRF7379TRPBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.36
US$0.36
10
US$0.34
US$3.43
100
US$0.33
US$32.52
500
US$0.31
US$153.55
1000
US$0.29
US$289.10
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