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SI4686DY-T1-E3

SI4686DY-T1-E3
Mfr. #:
SI4686DY-T1-E3
製造商:
Vishay / Siliconix
描述:
MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
生命週期:
製造商新產品
數據表:
SI4686DY-T1-E3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4686DY-T1-E3 DatasheetSI4686DY-T1-E3 Datasheet (P4-P6)SI4686DY-T1-E3 Datasheet (P7-P9)
ECAD Model:
更多信息:
SI4686DY-T1-E3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
E
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SO-8
商品名：
溝槽場效應晶體管
打包：
捲軸
高度：
1.75 mm
長度：
4.9 mm
系列：
SI4
寬度：
3.9 mm
品牌：
威世 / Siliconix
產品類別：
MOSFET
出廠包裝數量：
2500
子類別：
MOSFET
第 # 部分別名：
SI4686DY-E3
單位重量：
0.006596 oz
Tags
SI4686DY-T1, SI4686DY-T, SI4686, SI468, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    UA

    Excellent. Recommended.

    2019-04-15
    L***r
    L***r
    UA

    All yak head, super.

    2019-05-20
    O***n
    O***n
    RU

    Ringing as a diode, not igbt, in the work to check until you took a chance.

    2019-04-26
***ure Electronics
Single N-Channel 30 V 9.5 mOhms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18200mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 18.2A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:18.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型號 製造商 描述 庫存 價格
SI4686DY-T1-E3
DISTI # V72:2272_09215583		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
RoHS: Compliant		375
  • 250:$0.8146
  • 100:$0.8235
  • 25:$0.9485
  • 10:$1.0539
  • 1:$1.2997
SI4686DY-T1-E3
DISTI # V36:1790_09215583		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500:$0.6136
SI4686DY-T1-E3
DISTI # SI4686DY-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4501In Stock
  • 1000:$0.5389
  • 500:$0.6826
  • 100:$0.8263
  • 10:$1.0600
  • 1:$1.1900
SI4686DY-T1-E3
DISTI # SI4686DY-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4501In Stock
  • 1000:$0.5389
  • 500:$0.6826
  • 100:$0.8263
  • 10:$1.0600
  • 1:$1.1900
SI4686DY-T1-E3
DISTI # SI4686DY-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 12500:$0.4465
  • 5000:$0.4639
  • 2500:$0.4883
SI4686DY-T1-E3
DISTI # 25789852		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
RoHS: Compliant		375
  • 12:$1.2997
SI4686DY-T1-E3
DISTI # SI4686DY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4686DY-T1-E3
    DISTI # SI4686DY-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.2629
    • 15000:€0.2829
    • 10000:€0.3059
    • 5000:€0.3559
    • 2500:€0.5219
    SI4686DY-T1-E3
    DISTI # SI4686DY-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.4769
    • 15000:$0.4899
    • 10000:$0.5039
    • 5000:$0.5249
    • 2500:$0.5409
    SI4686DY-T1-E3
    DISTI # 75M5494    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 18.2A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 10000:$0.5720
    • 6000:$0.5850
    • 4000:$0.6080
    • 2000:$0.6750
    • 1000:$0.7430
    • 1:$0.7740
    SI4686DY-T1-E3
    DISTI # 69W7202    		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 18.2A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
    • 500:$0.8170
    • 250:$0.8840
    • 100:$0.9500
    • 50:$1.0400
    • 25:$1.1400
    • 10:$1.2300
    • 1:$1.4900
    SI4686DY-T1-E3
    DISTI # 781-SI4686DY-T1-E3    		Vishay IntertechnologiesMOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
    RoHS: Compliant    		4290
    • 1:$1.4800
    • 10:$1.2200
    • 100:$0.9410
    • 500:$0.8090
    SI4686DY-T1-E3VISHAY INTERTECHNOLOGIES 604
    • 281:$0.6198
    • 51:$0.7152
    • 1:$2.3840
    SI4686DY-T1-E3
    DISTI # 2335317    		Vishay IntertechnologiesMOSFET, N CH, 30V, 18.2A, SOIC
    RoHS: Compliant    		307
    • 250:£0.3580
    • 100:£0.3730
    • 25:£0.3870
    • 5:£0.4020
    SI4686DY-T1-E3Vishay IntertechnologiesMOSFET 30V 18.2A 5.2W 9.5mohm @ 10VAmericas -
      圖片 型號 描述
      SI4686DY-T1-E3

      Mfr.#: SI4686DY-T1-E3

      OMO.#: OMO-SI4686DY-T1-E3

      		 MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
      SI4686DY-T1-GE3

      Mfr.#: SI4686DY-T1-GE3

      OMO.#: OMO-SI4686DY-T1-GE3

      		 MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
      SI4686DY

      Mfr.#: SI4686DY

      OMO.#: OMO-SI4686DY-1190

      		 全新原裝
      SI4686DY-T1

      Mfr.#: SI4686DY-T1

      OMO.#: OMO-SI4686DY-T1-1190

      		 全新原裝
      SI4686DY-T1-E3

      Mfr.#: SI4686DY-T1-E3

      OMO.#: OMO-SI4686DY-T1-E3-VISHAY

      		 MOSFET N-CH 30V 18.2A 8-SOIC
      SI4686DY-T1-GE3

      Mfr.#: SI4686DY-T1-GE3

      OMO.#: OMO-SI4686DY-T1-GE3-VISHAY

      		 MOSFET N-CH 30V 18.2A 8-SOIC
      SI4686DY-TI-E3

      Mfr.#: SI4686DY-TI-E3

      OMO.#: OMO-SI4686DY-TI-E3-1190

      		 全新原裝
      可用性
      庫存:
      Available
      訂購:
      1987
      輸入數量:
      SI4686DY-T1-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$1.48
      US$1.48
      10
      US$1.22
      US$12.20
      100
      US$0.94
      US$94.10
      500
      US$0.81
      US$404.50
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