CGHV96050F2

Mfr. #:: CGHV96050F2
製造商:: N/A
描述:: RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
生命週期:: 製造商新產品
數據表:: CGHV96050F2 數據表
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ECAD Model:
更多信息:: CGHV96050F2 更多信息

產品屬性
屬性值

製造商: 科銳

產品分類: 晶體管 - FET、MOSFET - 單

打包: 托盤

安裝方式: 擰緊

工作溫度範圍: - 40 C to + 150 C

包裝盒: 440210

技術: 氮化鎵碳化矽

配置: 單身的

晶體管型: HEMT

獲得: 10 dB

班級: -

輸出功率: 50 W

鈀功耗: -

最高工作溫度: + 150 C

最低工作溫度: - 40 C

應用: -

工作頻率: 8.4 GHz to 9.6 GHz

Id 連續漏極電流: 6 A

Vds-漏-源-擊穿電壓: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 2.3 V

Rds-On-Drain-Source-Resistance: -

晶體管極性: N通道

正向跨導最小值: -

開發套件: CGHV96050F2-TB

VGS-柵極-源極擊穿電壓: 3 V

柵源截止電壓: - 10 V to + 2 V

最大漏柵電壓: -

NF-噪聲係數: -

P1dB-壓縮點: -

Tags: CGHV960, CGHV9, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV96050F2 描述

***i-Key: FET RF 100V 9.6GHZ 440210

CGHV96050F2 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

型號	製造商	描述	庫存	價格
CGHV96050F2 DISTI # CGHV96050F2-ND	Wolfspeed	RF MOSFET HEMT 40V 440210 RoHS: Compliant Min Qty: 1 Container: Tray	98In Stock	1:$458.6800
CGHV96050F2-TB DISTI # CGHV96050F2-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV96050F2 RoHS: Compliant Min Qty: 1 Container: Bulk	3In Stock	1:$550.0000
CGHV96050F2 DISTI # 941-CGHV96050F2	Cree, Inc.	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt RoHS: Compliant	5	1:$458.6800
CGHV96050F2-TB DISTI # 941-CGHV96050F2-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Not compliant	2	1:$550.0000
CGHV96050F2-TB DISTI # CGHV96050F2-TB	Wolfspeed	RF TRANSISTOR TEST FIXTURE RoHS: Compliant	2	2:$550.0000

相關產品

圖片	型號	描述
	Mfr.#: CGHV96100F2 OMO.#: OMO-CGHV96100F2	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
	Mfr.#: CGHV96050F1 OMO.#: OMO-CGHV96050F1	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
	Mfr.#: CGHV96050F2 OMO.#: OMO-CGHV96050F2	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
	Mfr.#: CGHV96050F1-TB OMO.#: OMO-CGHV96050F1-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGHV96050F1-TB OMO.#: OMO-CGHV96050F1-TB-WOLFSPEED	BOARD TEST FIXTURE FOR CGHV96050
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB-WOLFSPEED	TEST FIXTURE FOR CGHV96100F2
	Mfr.#: CGHV96100F2 OMO.#: OMO-CGHV96100F2-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
	Mfr.#: CGHV96050F2 OMO.#: OMO-CGHV96050F2-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
	Mfr.#: CGHV96050F1 OMO.#: OMO-CGHV96050F1-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT