ZXMP3A17DN8TA

Mfr. #:: ZXMP3A17DN8TA
製造商:: Diodes Incorporated
描述:: MOSFET Dl 30V P-Chnl UMOS
生命週期:: 製造商新產品
數據表:: ZXMP3A17DN8TA 數據表
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HTML Datasheet:: ZXMP3A17DN8TA Datasheet ZXMP3A17DN8TA Datasheet (P4-P6)ZXMP3A17DN8TA Datasheet (P7)
ECAD Model:

產品屬性
屬性值

製造商: 二極管公司

產品分類: 集成電路芯片

系列: ZXMP3A17

打包: Digi-ReelR 替代包裝

單位重量: 0.002610 oz

安裝方式: 貼片/貼片

包裝盒: 8-SOIC (0.154", 3.90mm Width)

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: 8-SO

配置: 雙雙漏

FET型: 2 P-Channel (Dual)

最大功率: 1.8W

晶體管型: 2 P-Channel

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 630pF @ 15V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 3.4A

Rds-On-Max-Id-Vgs: 70 mOhm @ 3.2A, 10V

Vgs-th-Max-Id: 1V @ 250μA (Min)

柵極電荷-Qg-Vgs: 15.8nC @ 10V

鈀功耗: 2.1 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 8.72 ns

上升時間: 2.87 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: - 4.4 A

Vds-漏-源-擊穿電壓: - 30 V

Rds-On-Drain-Source-Resistance: 110 mOhms

晶體管極性: P-通道

典型關斷延遲時間: 29.2 ns

典型開啟延遲時間: 1.74 ns

通道模式: 增強

Tags: ZXMP3A17D, ZXMP3A17, ZXMP3A, ZXMP3, ZXMP, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMP3A17DN8TA 描述

***et: Transistor MOSFET Array Dual P-CH 30V 4.4A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 30 V 0.07 Ohm Enhancement Mode MOSFET - SOIC-8

***(Formerly Allied Electronics): MOSFET Dual P-Channel 30V 4.4A SOIC8

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ure Electronics: Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8

***ical: Trans MOSFET N/P-CH 30V 4.1A/3.4A 8-Pin SOIC T/R

***des Inc SCT: COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, N+P, 30V VDS, 20±V VGS

***(Formerly Allied Electronics): MOSFET; N P channel; Dual; Enhance; 30V; SO8

***i-Key: MOSFET N/P-CHAN DUAL 30V 8SOIC

***S: French Electronic Distributor since 1988

***ment14 APAC: MOSFET, DUAL, NP, 30V, SO-8; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.4A; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V

***et: Transistor MOSFET Array Dual P-Channel 30V 4.9A 8-Pin SOIC

***ure Electronics: Dual P-Channel 30 V 0.058 Ohm 23 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.9A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes

***(Formerly Allied Electronics): IRF7303PBF Dual N-channel MOSFET Transistor; 4.9 A; 30 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC Tube

***klin Elektronik: INFINEON SMD MOSFET NFET 30V 4,9A 0,05Ω 150°C SO-8 IRF7303TRPBF

***fin: Transistor NPN Mos IRF7303/IRF7303PBF INTERNATIONAL RECTIFIER RoHS V=30 SO8

***roFlash: Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Po

***ark: Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:-; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes

***ical: Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:-30V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:-5A ;RoHS Compliant: Yes

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).

***nell: MOSFET, DUAL, P, SMD, 8-SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, P Channel: -5A; Current Id Max: -5A; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 0.046ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Max: -1.7V; Voltage Vgs Rds on Measurement: -10V

***ical: Trans MOSFET N-CH 30V 5A 8-Pin SOIC T/R

***S: French Electronic Distributor since 1988

***inecomponents.com: RECOMMEND REPLACEMENT PART: FDS6930A

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Market price

型號	製造商	描述	庫存	價格
ZXMP3A17DN8TA DISTI # ZXMP3A17DN8CT-ND	Diodes Incorporated	MOSFET 2P-CH 30V 3.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	61In Stock	10:$1.2630 1:$1.4100
ZXMP3A17DN8TA DISTI # ZXMP3A17DN8DKR-ND	Diodes Incorporated	MOSFET 2P-CH 30V 3.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
ZXMP3A17DN8TA DISTI # ZXMP3A17DN8TA-ND	Diodes Incorporated	MOSFET 2P-CH 30V 3.4A 8-SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	Temporarily Out of Stock	500:$0.7900
ZXMP3A17DN8TA DISTI # ZXMP3A17DN8TR-ND	Diodes Incorporated	MOSFET 2P-CH 30V 3.4A 8-SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	Temporarily Out of Stock
ZXMP3A17DN8TA DISTI # ZXMP3A17DN8TA	Diodes Incorporated	Trans MOSFET P-CH 30V 4.4A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMP3A17DN8TA) RoHS: Not Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$0.5699 1000:$0.5419 2000:$0.5169 3000:$0.4929 5000:$0.4819
ZXMP3A17DN8TA DISTI # 70438858	Diodes Incorporated	MOSFET Dual P-Channel 30V 4.4A SOIC8 RoHS: Compliant	0	25:$1.3300 50:$1.1600 100:$1.0400 250:$0.9500
ZXMP3A17DN8TA DISTI # 522-ZXMP3A17DN8TA	Diodes Incorporated	MOSFET Dl 30V P-Chnl UMOS RoHS: Compliant	796	1:$1.2500 10:$1.0600 100:$0.8130 500:$0.7190
ZXMP3A17DN8TA	Zetex / Diodes Inc		1782

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