IRF8313PBF

IRF8313PBF
Mfr. #:
IRF8313PBF
製造商:
Infineon / IR
描述:
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
生命週期:
製造商新產品
數據表:
IRF8313PBF 數據表
交貨:
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支付:
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HTML Datasheet:
IRF8313PBF DatasheetIRF8313PBF Datasheet (P4-P6)IRF8313PBF Datasheet (P7-P9)IRF8313PBF Datasheet (P10)
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
SO-8
通道數:
2 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
30 V
Id - 連續漏極電流:
9.7 A
Rds On - 漏源電阻:
21.6 mOhms
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
6 nC
Pd - 功耗:
2 W
配置:
雙重的
打包:
管子
高度:
1.75 mm
長度:
4.9 mm
晶體管類型:
2 N-Channel
寬度:
3.9 mm
品牌:
英飛凌/紅外
產品類別:
MOSFET
出廠包裝數量:
95
子類別:
MOSFET
第 # 部分別名:
SP001570694
單位重量:
0.019048 oz
Tags
IRF8313, IRF831, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***ark
Dual N Channel Mosfet, 30V, 9.7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0155Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V
***ment14 APAC
MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
型號 製造商 描述 庫存 價格
IRF8313PBF
DISTI # V99:2348_13891188
Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
RoHS: Compliant
182
  • 1:$0.2929
IRF8313PBF
DISTI # IRF8313PBF-ND
Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRF8313PBF..
    DISTI # 30728279
    Infineon Technologies AGIRF8313PBF..735
    • 260:$0.2969
    IRF8313PBF
    DISTI # 26198223
    Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
    RoHS: Compliant
    182
    • 25:$0.2929
    IRF8313PBF
    DISTI # IRF8313PBF
    Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC - Rail/Tube (Alt: IRF8313PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube
    Americas - 4924
      IRF8313PBF..
      DISTI # 10R3491
      Infineon Technologies AGDUAL N CHANNEL MOSFET, 30V, 9.7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V735
      • 1:$0.1930
      • 10:$0.1930
      • 100:$0.1930
      • 500:$0.1930
      • 1000:$0.1930
      • 2500:$0.1930
      • 10000:$0.1930
      IRF8313PBF
      DISTI # 942-IRF8313PBF
      Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
      RoHS: Compliant
      0
        IRF8313PBFInfineon Technologies AGPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant
        1439
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313PBFInternational RectifierPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant
        5182
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313TRPBF
        DISTI # IRF8313PBF-GURT
        Infineon Technologies AG2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
        RoHS: Compliant
        2600
        • 50:€0.2460
        • 100:€0.2060
        • 500:€0.1860
        • 2000:€0.1790
        IRF8313PBF
        DISTI # C1S327400167723
        Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
        RoHS: Compliant
        123
        • 50:$0.2240
        • 10:$0.3250
        圖片 型號 描述
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        OMO.#: OMO-IRF830-SIHF830-1190

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        OMO.#: OMO-IRF8308MTRPBF--1190

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        OMO.#: OMO-IRF830B-1190

        Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        IRF8313TRPBF

        Mfr.#: IRF8313TRPBF

        OMO.#: OMO-IRF8313TRPBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 9.7A 8-SOIC
        IRF833

        Mfr.#: IRF833

        OMO.#: OMO-IRF833-1190

        全新原裝
        可用性
        庫存:
        Available
        訂購:
        2500
        輸入數量:
        IRF8313PBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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