SI3585CDV-T1-GE3

SI3585CDV-T1-GE3
Mfr. #:
SI3585CDV-T1-GE3
製造商:
Vishay
描述:
Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
生命週期:
製造商新產品
數據表:
SI3585CDV-T1-GE3 數據表
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更多信息:
SI3585CDV-T1-GE3 更多信息
產品屬性
屬性值
製造商
威世矽
產品分類
FET - 陣列
系列
溝槽FETR
打包
Digi-ReelR 替代包裝
部分別名
SI3585CDV-GE3
單位重量
0.000705 oz
安裝方式
貼片/貼片
包裝盒
SOT-23-6 Thin, TSOT-23-6
技術
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
通道數
2 Channel
供應商-設備-包
6-TSOP
配置
1 N-Channel 1 P-Channel
FET型
N 和 P 溝道
最大功率
1.4W, 1.3W
晶體管型
1 N-Channel 1 P-Channel
漏源電壓 Vdss
20V
輸入電容-Ciss-Vds
150pF @ 10V
FET-Feature
邏輯電平門
Current-Continuous-Drain-Id-25°C
3.9A, 2.1A
Rds-On-Max-Id-Vgs
58 mOhm @ 2.5A, 4.5V
Vgs-th-Max-Id
1.5V @ 250μA
柵極電荷-Qg-Vgs
4.8nC @ 10V
鈀功耗
1.4 W 1.3 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
8 ns 7 ns
上升時間
20 ns 10 ns
VGS-柵極-源極-電壓
12 V
Id 連續漏極電流
3.9 A - 2.1 A
Vds-漏-源-擊穿電壓
20 V
VGS-th-Gate-Source-Threshold-Voltage
1.5 V - 1.5 V
Rds-On-Drain-Source-Resistance
58 mOhms 195 mOhms
晶體管極性
N 溝道 P 溝道
典型關斷延遲時間
11 ns 13 ns
典型開啟延遲時間
5 ns 3 ns
Qg-門電荷
3.2 nC 6 nC
正向跨導最小值
12 S 1 S
Tags
SI3585CDV-T, SI3585C, SI3585, SI358, SI35, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
型號 製造商 描述 庫存 價格
SI3585CDV-T1-GE3
DISTI # V72:2272_09216703
Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.1576
  • 1000:$0.1751
  • 500:$0.2161
  • 250:$0.2476
  • 100:$0.2503
  • 25:$0.3124
  • 10:$0.3163
  • 1:$0.3860
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3CT-ND
Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
12000In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3DKR-ND
Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
12000In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3TR-ND
Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
9000In Stock
  • 3000:$0.2046
SI3585CDV-T1-GE3
DISTI # 31154779
Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.1576
  • 1000:$0.1751
  • 500:$0.2161
  • 250:$0.2476
  • 100:$0.2503
  • 48:$0.3124
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI3585CDV-T1-GE3
    DISTI # SI3585CDV-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.3089
    • 6000:€0.2109
    • 12000:€0.1809
    • 18000:€0.1669
    • 30000:€0.1559
    SI3585CDV-T1-GE3
    DISTI # SI3585CDV-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3585CDV-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.1609
    • 6000:$0.1559
    • 12000:$0.1499
    • 18000:$0.1459
    • 30000:$0.1419
    SI3585CDV-T1-GE3
    DISTI # 70AC6501
    Vishay Intertechnologies 0
    • 1:$0.6500
    • 25:$0.5440
    • 50:$0.4760
    • 100:$0.4070
    • 250:$0.3530
    • 500:$0.2990
    • 1000:$0.2310
    SI3585CDV-T1-GE3
    DISTI # 99W9612
    Vishay IntertechnologiesDual MOSFET, N and P Channel, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V0
    • 1:$0.1760
    • 3000:$0.1740
    • 6000:$0.1660
    SI3585CDV-T1-GE3
    DISTI # 78-SI3585CDV-T1-GE3
    Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
    RoHS: Compliant
    378
    • 1:$0.5700
    • 10:$0.4340
    • 100:$0.3220
    • 500:$0.2650
    • 1000:$0.2050
    • 3000:$0.2000
    SI3585CDV-T1-GE3
    DISTI # 2454805RL
    Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant
    0
    • 1:$0.9020
    • 10:$0.6870
    • 100:$0.5100
    • 500:$0.4190
    • 1000:$0.3250
    • 3000:$0.2940
    • 6000:$0.2810
    SI3585CDV-T1-GE3
    DISTI # 2454805
    Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant
    0
    • 1:$0.9020
    • 10:$0.6870
    • 100:$0.5100
    • 500:$0.4190
    • 1000:$0.3250
    • 3000:$0.2940
    • 6000:$0.2810
    SI3585CDV-T1-GE3
    DISTI # 2454805
    Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant
    0
    • 5:£0.4650
    • 25:£0.4380
    • 100:£0.3050
    SI3585CDV-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
    RoHS: Compliant
    Americas -
    • 3000:$0.1570
    • 6000:$0.1480
    • 12000:$0.1440
    • 24000:$0.1420
    圖片 型號 描述
    SI3585CDV-T1-GE3

    Mfr.#: SI3585CDV-T1-GE3

    OMO.#: OMO-SI3585CDV-T1-GE3

    MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
    SI3585CDV

    Mfr.#: SI3585CDV

    OMO.#: OMO-SI3585CDV-1190

    全新原裝
    SI3585CDV-T1-E3

    Mfr.#: SI3585CDV-T1-E3

    OMO.#: OMO-SI3585CDV-T1-E3-1190

    全新原裝
    SI3585CDV-T1-GE3-CUT TAPE

    Mfr.#: SI3585CDV-T1-GE3-CUT TAPE

    OMO.#: OMO-SI3585CDV-T1-GE3-CUT-TAPE-1190

    全新原裝
    SI3585CDV-T1-GE3

    Mfr.#: SI3585CDV-T1-GE3

    OMO.#: OMO-SI3585CDV-T1-GE3-VISHAY

    Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
    可用性
    庫存:
    Available
    訂購:
    4500
    輸入數量:
    SI3585CDV-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$0.19
    US$0.19
    10
    US$0.18
    US$1.80
    100
    US$0.17
    US$17.01
    500
    US$0.16
    US$80.35
    1000
    US$0.15
    US$151.20
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