SCT2160KEC

Mfr. #:: SCT2160KEC
製造商:: Rohm Semiconductor
描述:: Darlington Transistors MOSFET FET: 1200V 20A 160mOhm
生命週期:: 製造商新產品
數據表:: SCT2160KEC 數據表
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更多信息:: SCT2160KEC 更多信息

產品屬性
屬性值

製造商: 羅門半導體

產品分類: FET - 單

系列: SCT2160KE

打包: 管子

單位重量: 1.340411 oz

安裝方式: 通孔

包裝盒: TO-247-3

技術: 碳化矽

工作溫度: 175°C (TJ)

安裝型: 通孔

通道數: 1 Channel

供應商-設備-包: TO-247

配置: 單身的

FET型: MOSFET N 溝道，金屬氧化物

最大功率: 165W

晶體管型: 1 N-Channel

漏源電壓 Vdss: 1200V (1.2kV)

輸入電容-Ciss-Vds: 1200pF @ 800V

FET-Feature: 碳化矽 (SiC)

Current-Continuous-Drain-Id-25°C: 22A (Tc)

Rds-On-Max-Id-Vgs: 208 mOhm @ 7A, 18V

Vgs-th-Max-Id: 4V @ 2.5mA

柵極電荷-Qg-Vgs: 62nC @ 18V

鈀功耗: 165 W

秋季時間: 27 ns

上升時間: 25 ns

Id 連續漏極電流: 22 A

Vds-漏-源-擊穿電壓: 1200 V

VGS-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 160 mOhms

晶體管極性: N通道

典型關斷延遲時間: 67 ns

典型開啟延遲時間: 23 ns

Qg-門電荷: 62 nC

正向跨導最小值: 2.4 S

Tags: SCT2160, SCT216, SCT21, SCT2, SCT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SCT2160KEC 描述

***ure Electronics: 1200 V 160 mOhm 20 A Surface Flange Mount 2G SiC MosFet - TO-247-3

***Components: SiC N-Channel MOSFET, 22 A, 1200 V, 3-Pin TO-247 ROHM SCT2160KEC

***ical: Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans SiC MOSFET N-CH 1200V 22A 3-Pin TO-247 Tube

***i-Key: MOSFET N-CH 1200V 22A TO-247

***ronik: SiC-N 1200V 22A 160mOhm TO247-3

***: FET: 1200V, 20A, 160MOHM, TO24

***ark: Mosfet, N Channel, 1.2Kv, 22A, 0R16, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.16Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V; Power Dissipation Pd:165W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C

***nell: MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:22A; Napięcie drenu / źródła Vds:1.2kV; Rezystancja przewodzenia Rds(on):0.16ohm; Napięcie Vgs pomiaru Rds(on):18V; Napięcie progowe Vgs:4V; Straty mocy Pd:165W; Rodzaj obudowy tranzystora:TO-247; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2018); Temperatura robocza, min.:-55°C

SCT2160KEC 更多信息

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

N-Channel SiC Power MOSFETs: ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.

Industrial Product Solutions: ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.

Electronic Vehicle (EV) Solutions: ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.

Market price

型號	製造商	描述	庫存	價格
SCT2160KEC DISTI # 30612591	ROHM Semiconductor	SCT2160KEC RoHS: Compliant	2	2:$15.0450
SCT2160KEC DISTI # SCT2160KEC-ND	ROHM Semiconductor	MOSFET N-CH 1200V 22A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	250:$11.2871 100:$12.3794 25:$13.4716 10:$14.5640 1:$16.0200
SCT2160KEC DISTI # C1S625901535563	ROHM Semiconductor	MOSFETs RoHS: Compliant	30	26:$27.6000 6:$29.7000 2:$31.3000
SCT2160KEC DISTI # C1S625901135062	ROHM Semiconductor	MOSFETs RoHS: Compliant	2	1:$11.8000
SCT2160KEC DISTI # SCT2160KEC	ROHM Semiconductor	Trans SiC MOSFET N-CH 1200V 22A 3-Pin TO-247 Tube - Rail/Tube (Alt: SCT2160KEC) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$10.3900 10:$10.1900 25:$9.9900 50:$9.7900 100:$9.1900 500:$8.6900 1000:$8.3900
SCT2160KEC DISTI # 06X0711	ROHM Semiconductor	MOSFET, N CHANNEL, 1.2KV, 22A, 0R16, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:4V RoHS Compliant: Yes	1026	1:$13.9000 10:$12.7800 25:$12.2500 50:$11.6500 100:$11.0400
SCT2160KEC DISTI # 755-SCT2160KEC	ROHM Semiconductor	MOSFET 1200V20A160mOhm Silicon Carbide SiC RoHS: Compliant	0	1:$13.9000 10:$12.7800 25:$12.2500 100:$11.0400
SCT2160KEC DISTI # 1246853	ROHM Semiconductor	SIC MOSFET N-CHANNEL 1200V 22A TO247, EA	1	1:£12.1900 5:£10.9700 10:£9.9800 25:£9.1500 50:£8.6900
SCT2160KEC DISTI # 2345466	ROHM Semiconductor	MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3 RoHS: Compliant	746	1:£11.5400 5:£11.0500 10:£9.7200 50:£9.4700 100:£9.2100
SCT2160KEC	ROHM Semiconductor	MOSFET 1200V20A160mOhm Silicon Carbide SiC RoHS: Compliant	Americas -
SCT2160KEC DISTI # 2345466	ROHM Semiconductor	MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3 RoHS: Compliant	720	1:$22.0000 10:$20.2300 25:$19.3900 100:$19.1100

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