CSD19531KCS

Mfr. #:: CSD19531KCS
描述:: MOSFET N-CH 100V 100A TO220-3
生命週期:: 製造商新產品
數據表:: CSD19531KCS 數據表
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更多信息:: CSD19531KCS 更多信息 CSD19531KCS Product Details

產品屬性
屬性值

製造商: TI

產品分類: FET - 單

系列: CSD19531KCS

打包: 管子

單位重量: 0.211644 oz

安裝方式: 通孔

商品名: 場效應管

包裝盒: TO-220-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 179 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 4.1 ns

上升時間: 7.2 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 105 A

Vds-漏-源-擊穿電壓: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 2.7 V

Rds-On-Drain-Source-Resistance: 7.7 mOhms

晶體管極性: N通道

典型關斷延遲時間: 16 ns

典型開啟延遲時間: 8.4 ns

Qg-門電荷: 38 nC

通道模式: 增強

Tags: CSD19531, CSD1953, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19531KCS 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型號	描述	庫存	價格
CSD19531KCS DISTI # V99:2348_07248852	Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	131	100:$1.1395 10:$1.3700 1:$1.5699
CSD19531KCS DISTI # 296-37480-5-ND	MOSFET N-CH 100V 100A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	1344In Stock	5000:$0.9023 2500:$0.9370 1000:$1.0065 500:$1.2147 100:$1.5617 50:$1.7352 10:$1.9430 1:$2.1500
CSD19531KCS DISTI # 25862361	Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	131	100:$1.1395 10:$1.3700 8:$1.5699
CSD19531KCS DISTI # 30217639	Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	40	100:$1.2192 40:$1.5168
CSD19531KCSÁÁ DISTI # CSD19531KCS	Trans MOSFET N-CH 100V 105A 3-Pin TO-220 Tube (Alt: CSD19531KCS) RoHS: Compliant Min Qty: 550 Container: Tube	Asia - 0
CSD19531KCSÁÁ DISTI # CSD19531KCS	Trans MOSFET N-CH 100V 105A 3-Pin TO-220 Tube - Rail/Tube (Alt: CSD19531KCS) RoHS: Compliant Min Qty: 400 Container: Tube	Americas - 0	400:$0.9149 500:$0.8709 900:$0.8419 2000:$0.8139 4000:$0.7909
CSD19531KCS DISTI # 11X3114	MOSFET, N CHANNEL, 100V, 100A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0064ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,MSL:-RoHS Compliant: Yes	468	1:$1.8600 10:$1.5800 100:$1.2700
CSD19531KCS DISTI # 71AC2912	MOSFET, N CHANNEL, 100V, 100A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0064ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,PowerRoHS Compliant: Yes	41	1:$1.8600 10:$1.5800 100:$1.2700
CSD19531KCS	100V, 6.4mOhm, TO-220 NexFET&#153,Power MOSFET	4677	1000:$0.7200 750:$0.7800 500:$0.9500 250:$1.1400 100:$1.2300 25:$1.4100 10:$1.5200 1:$1.7000
CSD19531KCS	Power Field-Effect Transistor, 100A I(D), 100V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 RoHS: Compliant	70193	1000:$0.8300 500:$0.8700 100:$0.9100 25:$0.9500 1:$1.0200
CSD19531KCS DISTI # 595-CSD19531KCS	MOSFET 100V 6.4mOhm Pwr MOSFET RoHS: Compliant	573	1:$1.8600 10:$1.5800 100:$1.2700
CSD19531KCS DISTI # 8274912P	MOSFET N-CHANNEL 100V 105A NEXFET TO-220, TU	100	50:£1.1520 100:£0.9240 250:£0.8640 500:£0.8060
CSD19531KCS DISTI # 8274912	MOSFET N-CHANNEL 100V 105A NEXFET TO-220, PK	85	5:£1.4580 50:£1.1520 100:£0.9240 250:£0.8640 500:£0.8060
CSD19531KCS DISTI # 2419495	MOSFET, N CHANNEL, 100V, 100A, TO-220-3 RoHS: Compliant	509	1:£1.6100 10:£1.2500 100:£0.9700 250:£0.9600 500:£0.9500
CSD19531KCS DISTI # C1S746203275260	Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	131	100:$1.1395 10:$1.3700
CSD19531KCS DISTI # 2419495	MOSFET, N CHANNEL, 100V, 100A, TO-220-3 RoHS: Compliant	559	1:$2.8500

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