IPB80P03P4L-04

Mfr. #:: IPB80P03P4L-04
製造商:: Infineon Technologies
描述:: IGBT Transistors MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
生命週期:: 製造商新產品
數據表:: IPB80P03P4L-04 數據表
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更多信息:: IPB80P03P4L-04 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: OptiMOS-P2

打包: 捲軸

部分別名: IPB80P03P4L04ATMA1 IPB80P03P4L04XT SP000396284

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

商品名: 優化MOS

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

晶體管型: 1 P-Channel

鈀功耗: 137 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 40 ns

上升時間: 11 ns

VGS-柵極-源極-電壓: 5 V

Id 連續漏極電流: - 80 A

Vds-漏-源-擊穿電壓: - 30 V

Rds-On-Drain-Source-Resistance: 4.1 mOhms

晶體管極性: P-通道

典型關斷延遲時間: 140 ns

典型開啟延遲時間: 17 ns

Qg-門電荷: 125 nC

Tags: IPB80P03P4L, IPB80P03P4, IPB80P03, IPB80P, IPB8, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB80P03P4L-04 更多信息

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

型號	製造商	描述	庫存	價格
IPB80P03P4L04ATMA1 DISTI # V72:2272_06383799	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	948	500:$0.8985 250:$0.9931 100:$1.1469 25:$1.4540 10:$1.6054 1:$1.8114
IPB80P03P4L04ATMA1 DISTI # IPB80P03P4L04ATMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 30V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.0238
IPB80P03P4L04ATMA1 DISTI # 31280268	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	948	500:$0.8985 250:$0.9931 100:$1.1469 25:$1.4540 10:$1.6054 8:$1.8114
IPB80P03P4L04ATMA1 DISTI # IPB80P03P4L04ATMA1	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80P03P4L04ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.9239 2000:$0.8909 4000:$0.8589 6000:$0.8299 10000:$0.8149
IPB80P03P4L04ATMA1 DISTI # SP000396284	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000396284) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€1.1569 2000:€0.8989 4000:€0.8339 6000:€0.8079 10000:€0.7769
IPB80P03P4L04ATMA1 DISTI # 34AC1662	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-80A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes	995	1:$2.0400 10:$1.8000 25:$1.6200 50:$1.4500 100:$1.2600 250:$1.0800 500:$0.9860 1000:$0.9340
IPB80P03P4L-04 DISTI # 726-IPB80P03P4L-04	Infineon Technologies AG	MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 RoHS: Compliant	7653	1:$1.8900 10:$1.6100 100:$1.2900 500:$1.1300 1000:$0.9310
IPB80P03P4L04ATMA1 DISTI # 2781074	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-263 RoHS: Compliant	955	5:$3.0100 25:$2.6200 100:$2.1400
IPB80P03P4L04ATMA1 DISTI # 2781074	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-263 RoHS: Compliant	955	5:£0.8590 25:£0.8550 100:£0.8510

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圖片	型號	描述
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	Mfr.#: IPB80P03P4L-04 OMO.#: OMO-IPB80P03P4L-04-126	IGBT Transistors MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
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