IPB80P03P4L

IPB80P03P4L-04 vs IPB80P03P4L04ATMA1 vs IPB80P03P4L07ATMA1

 
PartNumberIPB80P03P4L-04IPB80P03P4L04ATMA1IPB80P03P4L07ATMA1
DescriptionMOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2MOSFET P-CHANNELMOSFET P-CH 30V 80A TO263-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance4.1 mOhms--
Vgs Gate Source Voltage5 V--
Qg Gate Charge125 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation137 W--
ConfigurationSingleSingle-
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOS--
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS-P2--
Transistor Type1 P-Channel1 P-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time40 ns--
Product TypeMOSFETMOSFET-
Rise Time11 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time140 ns--
Typical Turn On Delay Time17 ns--
Part # AliasesIPB80P03P4L04ATMA1 IPB8P3P4L4XT SP000396284IPB80P03P4L-04 IPB8P3P4L4XT SP000396284-
Unit Weight0.139332 oz0.139332 oz-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IPB80P03P4L-04 MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
IPB80P03P4L04ATMA1 MOSFET P-CH 30V 80A TO263-3
IPB80P03P4L07ATMA1 MOSFET P-CH 30V 80A TO263-3
Infineon Technologies
Infineon Technologies
IPB80P03P4L04ATMA1 MOSFET P-CHANNEL
IPB80P03P4L-04 IGBT Transistors MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
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