FDS6984S

Mfr. #:: FDS6984S
製造商:: ON Semiconductor
描述:: MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC
生命週期:: 製造商新產品
數據表:: FDS6984S 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 仙童半導體

產品分類: FET - 陣列

系列: PowerTrenchR、SyncFET

打包: 數碼捲軸

包裝盒: 8-SOIC (0.154", 3.90mm Width)

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

供應商-設備-包: 8-SO

FET型: 2 N-Channel (Dual)

最大功率: 900mW

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 1233pF @ 15V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 5.5A, 8.5A

Rds-On-Max-Id-Vgs: 19 mOhm @ 8.5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

柵極電荷-Qg-Vgs: 12nC @ 5V

Tags: FDS6984S, FDS6984, FDS698, FDS69, FDS6, FDS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS6984S 描述

***Yang: Transistor MOSFET Array Dual N-Channel 30V 5.5A/8.5A 8-Pin SOIC N T/R - Bulk

***roFlash: Trans Mosfet N-ch 30V 5.5A/8.5A 8-PIN SOIC N T/r

***i-Key: MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC

***S: French Electronic Distributor since 1988

***et: TRANS MOSFET P-CH 30V 7A 8SOIC

***ser: MOSFETs 30V P-CH DUAL PowerTrench MOSFET

***inecomponents.com: 30V/25, 23/35MO, PCH, DUAL, SO8, 500A GOX, PTII

***DA Technology Co., Ltd.: Product Description Demo for Development.

***S: French Electronic Distributor since 1988

***emi: Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY

***Yang: Trans MOSFET N-CH 30V 6A 8-Pin SOIC N T/R - Tape and Reel

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel / Schottky Diode; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.024ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes

***et: Transistor MOSFET Array Dual N-CH 30V 6A 8-Pin SOIC T/R

***ser: MOSFETs- Power and Small Signal 30V 6A N-Channel No-Cancel/No-Return

***r Electronics: Power Field-Effect Transistor, 6A I(D), 30V, 0.032ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***(Formerly Allied Electronics): SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor; 5.9 A; 30 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 30 V 0.035 Ohms Surface Mount Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R / MOSFET 2N-CH 30V 6.9A 8-SOIC

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6900mA; On Resistance, Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:20V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, DUAL, N, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:4936; Current Id Max:6.9A; N-channel Gate Charge:4.5nC; On State Resistance @ Vgs = 4.5V:51mohm; On State resistance @ Vgs = 10V:35mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***et: Trans MOSFET N-CH 30V 7A 8-Pin DSO T/R

***el Nordic: Contact for details

***et Japan: Transistor MOSFET Array Dual N-CH 30V 6.9A 8-Pin SOIC T/R

***ineon SCT: Automotive Q101 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET

***nell: MOSFET, AUTO, DUAL N-CH, 30V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2.4W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Market price

型號	製造商	描述	庫存	價格
FDS6984S DISTI # FDS6984STR-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDS6984S DISTI # FDS6984SCT-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDS6984S DISTI # FDS6984SDKR-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDS6984S	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 8.5A I(D), 30V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	716268	1000:$1.5300 500:$1.6100 100:$1.6800 25:$1.7500 1:$1.8800
FDS6984S DISTI # 512-FDS6984S	ON Semiconductor	MOSFET SO-8 DUAL N-CH RoHS: Compliant	0
FDS6984S_Q DISTI # 512-FDS6984S_Q	ON Semiconductor	MOSFET SO-8 DUAL N-CH RoHS: Not compliant	0

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