C3M0120100J

Mfr. #:: C3M0120100J
製造商:: N/A
描述:: MOSFET 1000V 120mOhm G3 SiC MOSFET TO-263-7
生命週期:: 製造商新產品
數據表:: C3M0120100J 數據表
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更多信息:: C3M0120100J 更多信息

產品屬性
屬性值

製造商：: 克里公司

產品分類：: MOSFET

RoHS：: Y

技術：: 碳化矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-263-7

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 1 kV

Id - 連續漏極電流：: 22 A

Rds On - 漏源電阻：: 120 mOhms

Vgs th - 柵源閾值電壓：: 1.8 V

Vgs - 柵源電壓：: 15 V, - 4 V

Qg - 門電荷：: 21.5 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 83 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

晶體管類型：: 1 N-Channel

品牌：: Wolfspeed / 克里

正向跨導 - 最小值：: 7.7 S

秋季時間：: 8 ns

產品類別：: MOSFET

上升時間：: 8 ns

出廠包裝數量：: 50

子類別：: MOSFET

典型關斷延遲時間：: 14 ns

典型的開啟延遲時間：: 7 ns

單位重量：: 0.077603 oz

Tags: C3M01, C3M0, C3M

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

C3M0120100J 描述

***Components: SiC N-Channel MOSFET, 22 A, 1000 V, 7 + Tab-Pin D2PAK Wolfspeed C3M0120100J

***i-Key: MOSFET N-CH 1000V 22A D2PAK-7

***ment14 APAC: 场效应管, MOSFET, N沟道, 1KV, 22A, TO-263;

***ark: 1000V, 120 MOHM, G3 SIC MOSFET

***hardson RFPD: SILICON CARBIDE MOSFETS

***nell: MOSFET, CA-N, 1KV, 22A, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:22A; Tensione Drain Source Vds:1kV; Resistenza di Attivazione Rds(on):0.12ohm; Tensione Vgs di Misura Rds(on):15V; Tensione di Soglia Vgs:2.1V; Dissipazione di Potenza Pd:83W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:C3M Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)

C3M0120100J 更多信息

C3M0120100J SiC Power MOSFET: Wolfspeed C3M0120100J SiC Power MOSFET reduces switching loss and minimizes gate ringing. This MOSFET increases system switching frequency and is suitable for fast switching devices. The C3M0120100J MOSFET includes typical turn-off delay time 14ns and turn-on delay time 7ns. This MOSFET operates at a temperature range from -55ºC to 150ºC. The C3M0120100J SiC MOSFET offers continuous drain current (Id) of 22A, VDS of 1000V, 120mΩ RDS(on), and 21.5nC Qg. This MOSFET incorporates high system efficiency, reduced cooling requirements, and increase power density.Learn More

Market price

型號	製造商	描述	庫存	價格
C3M0120100J DISTI # V99:2348_17082086	Cree, Inc.	SILICON CARBIDE POWER TRANSISTORS/MODULES	900	1:$9.6899
C3M0120100J DISTI # V36:1790_17082086	Cree, Inc.	SILICON CARBIDE POWER TRANSISTORS/MODULES	0	1000000:$6.2120 500000:$6.2150 100000:$6.6400 10000:$7.4560 1000:$7.5960
C3M0120100J DISTI # C3M0120100J-ND	Wolfspeed	MOSFET N-CH 1000V 22A D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Tube	680In Stock	100:$8.7248 1:$8.7500
C3M0120100J DISTI # 32035291	Cree, Inc.	SILICON CARBIDE POWER TRANSISTORS/MODULES	900	1:$9.6899
C3M0120100J DISTI # 941-C3M0120100J	Cree, Inc.	MOSFET 1000V 120mOhm G3 SiC MOSFET TO-263-7 RoHS: Compliant	777	1:$8.7500 100:$8.4100 500:$8.0000
C3M0120100J DISTI # 1503947	Cree, Inc.	MOSFET N-CH 1000V 22A C3M SIC TO-263-7, TU	382	250:£6.0410 150:£6.1640 50:£6.4600
C3M0120100J DISTI # 1503965	Cree, Inc.	MOSFET N-CH 1000V 22A C3M SIC TO-263-7, EA	196	40:£6.3800 20:£6.5100 10:£6.6400 1:£6.7800
C3M0120100J DISTI # C3M0120100J	Wolfspeed	SILICON CARBIDE MOSFETS RoHS: Compliant	970	1:$7.5700 11:$7.3400 51:$7.0300
C3M0120100J DISTI # 2749949	Wolfspeed	MOSFET, N-CH, 1KV, 22A, TO-263 RoHS: Compliant	0	1:$14.6000

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