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FQP55N10

FQP55N10
Mfr. #:
FQP55N10
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 100V N-Channel QFET
生命週期:
製造商新產品
數據表:
FQP55N10 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
55 A
Rds On - 漏源電阻：
26 mOhms
Vgs - 柵源電壓：
25 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
155 W
配置：
單身的
頻道模式：
增強
商品名：
場效應管
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FQP55N10
晶體管類型：
1 N-Channel
類型：
MOSFET
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
38 S
秋季時間：
140 ns
產品類別：
MOSFET
上升時間：
250 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
110 ns
典型的開啟延遲時間：
25 ns
第 # 部分別名：
FQP55N10_NL
單位重量：
0.063493 oz
Tags
FQP55N1, FQP55, FQP5, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***a
    G***a
    RU

    Everything came

    2019-01-21
    I***v
    I***v
    KZ

    All OK

    2019-05-27
    I***v
    I***v
    RU

    The order came davolno quickly for a couple of weeks +-, but the trouble of the converter does not work adjustment of the current, opened the dispute money returned. Buying these modules regardless of the seller and the manufacturer (i know 2 types of this module) keep in mind that among them a lot of such marriage as in my copy. I already bought 3 such modules in different places and 2 of them did not work adjusting the current, and both non-working mozhulya were from different manufacturers (the modules differ between themselves by the presence of markers on the textile and clamping screws (this under the cross a more prized, with the inscription, under the slots but they do not work the same :-))

    2019-04-09
***emi
Power MOSFET, N-Channel, QFET®, 100 V, 55 A, 26 mΩ, TO-220
***et
Trans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 100 V 0.026 O Through Hole Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
Power MOSFET, N-Channel, QFET®, 100 V, 57 A, 23 mΩ, TO-220
***Yang
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
N-Channel 100 V 23 mOhm Through Hole Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:57A; On State Resistance Max:23mohm; Package / Case:TO-220; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulse Current Idm:228A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***eco
Transistor MOSFET N Channel 100 Volt 57 Amp 3-Pin 3+ Tab TO-220AB
***ure Electronics
Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;TO-220AB;PD 2.5W
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***id Electronics
Transistor MOSFET N-Ch. 59A/100V TO220 IRF 3710 PBF
***ter Electronics
MOSFET, 100V, 57A, 23 MOHM, 86.7 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***roFlash
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, 57A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:100V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 100 V 25 mOhm 114 nC HEXFET® Power Mosfet - TO-220-3
***eco
IRFB59N10DPBF,MOSFET, 100V, 59 A, 25 MOHM, 76 NC QG, TO-220A
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***el Electronic
Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***eco
Transistor HUF75639P3 N-Channel Power MOSFET 100Volt 56A TO-220AB
***ure Electronics
N-Channel 100 V 0.025 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***Yang
Trans MOSFET N-CH 100V 56A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,100V,56A,TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
***ark
Trans MOSFET N-CH 100V 47A Automotive 3-Pin(3+Tab) TO-220AB Rail
***peria
N-channel TrenchMOS standard level FET
***or
PFET, 47A I(D), 100V, 0.028OHM,
***et
Trans MOSFET N-CH 100V 44A 3-Pin(3+Tab) TO-220AB Rail
***ser
MOSFETs 44a, 100V, 0.030 Ohm N-Ch MOSFET
***ter Electronics
PWR MOS ULTRAFET 100V/41A/0.030 OHM N-CH
型號 製造商 描述 庫存 價格
FQP55N10
DISTI # V79:2366_17794203		ON SemiconductorQF 100V 26MOHM TO220619
  • 10000:$0.7136
  • 5000:$0.7426
  • 2000:$0.7707
  • 1000:$0.8183
  • 500:$0.9317
  • 100:$1.0242
  • 10:$1.1759
  • 1:$1.2976
FQP55N10
DISTI # FQP55N10-ND		ON SemiconductorMOSFET N-CH 100V 55A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		138In Stock
  • 1000:$1.2470
  • 500:$1.5050
  • 100:$1.9350
  • 10:$2.4080
  • 1:$2.6700
FQP55N10
DISTI # 26637346		ON SemiconductorQF 100V 26MOHM TO22017000
  • 1000:$0.9112
FQP55N10
DISTI # 26118456		ON SemiconductorQF 100V 26MOHM TO220619
  • 500:$0.9317
  • 100:$1.0242
  • 19:$1.1759
FQP55N10
DISTI # FQP55N10		ON SemiconductorTrans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP55N10)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.4769
  • 10:€1.2079
  • 25:€1.0329
  • 50:€0.9379
  • 100:€0.9229
  • 500:€0.9089
  • 1000:€0.8949
FQP55N10
DISTI # FQP55N10		ON SemiconductorTrans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP55N10)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    FQP55N10
    DISTI # FQP55N10    		ON SemiconductorTrans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP55N10)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 1000:$0.8879
    • 2000:$0.8819
    • 4000:$0.8709
    • 6000:$0.8599
    • 10000:$0.8389
    FQP55N10
    DISTI # 34C0501    		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,55A I(D),TO-220 ROHS COMPLIANT: YES0
    • 1:$2.5000
    • 10:$2.0300
    • 100:$1.6500
    • 500:$1.4500
    • 1000:$1.2200
    • 2500:$1.1200
    • 10000:$1.0700
    FQP55N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		2000
    • 1000:$1.2100
    • 500:$1.2700
    • 100:$1.3300
    • 25:$1.3800
    • 1:$1.4900
    FQP55N10
    DISTI # 512-FQP55N10    		ON SemiconductorMOSFET 100V N-Channel QFET
    RoHS: Compliant    		1678
    • 1:$2.3100
    • 10:$1.9600
    • 100:$1.5700
    • 500:$1.3700
    • 1000:$1.1400
    • 2000:$1.0600
    • 5000:$1.0200
    FQP55N10
    DISTI # 6715149P    		ON SemiconductorMOSFET N-CHANNEL 100V 55A TO220AB, TU1310
    • 50:£1.3220
    • 100:£1.2160
    FQP55N10
    DISTI # 6715149    		ON SemiconductorMOSFET N-CHANNEL 100V 55A TO220AB, PK65
    • 5:£1.4360
    • 50:£1.3220
    • 100:£1.2160
    FQP55N10ON SemiconductorINSTOCK7939
      FQP55N10ON Semiconductor 7200
      • 1:$2.0200
      • 100:$1.2900
      • 500:$1.0700
      • 1000:$0.9800
      FQP55N10
      DISTI # C1S541901511580      		ON SemiconductorTrans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		619
      • 500:$0.9110
      • 100:$1.0307
      • 10:$1.1743
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      Mfr.#: 2SA1943OTU

      OMO.#: OMO-2SA1943OTU

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      LL4148

      Mfr.#: LL4148

      OMO.#: OMO-LL4148

      		 Diodes - General Purpose, Power, Switching Small Signal Diode
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      Mfr.#: STFH24N60M2

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      PIC18F45K22-I/P

      Mfr.#: PIC18F45K22-I/P

      OMO.#: OMO-PIC18F45K22-I-P

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      S811-1X1T-06-F

      Mfr.#: S811-1X1T-06-F

      OMO.#: OMO-S811-1X1T-06-F-BEL

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      		 DIODE GEN PURP 100V 200MA SOD80
      可用性
      庫存:
      Available
      訂購:
      1984
      輸入數量:
      FQP55N10的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$1.90
      US$1.90
      10
      US$1.61
      US$16.10
      100
      US$1.29
      US$129.00
      500
      US$1.13
      US$565.00
      1000
      US$0.94
      US$936.00
      2000
      US$0.87
      US$1 744.00
      5000
      US$0.84
      US$4 200.00
      10000
      US$0.81
      US$8 070.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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