OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

IGLD60R070D1AUMA1

IGLD60R070D1AUMA1
Mfr. #:
IGLD60R070D1AUMA1
製造商:
Infineon Technologies
描述:
MOSFET 600V CoolGaN Power Transistor
生命週期:
製造商新產品
數據表:
IGLD60R070D1AUMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IGLD60R070D1AUMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
氮化鎵
安裝方式：
貼片/貼片
包裝/案例：
PG-LSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
15 A
Rds On - 漏源電阻：
70 mOhms
Vgs th - 柵源閾值電壓：
0.9 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
5.8 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
114 W
配置：
單身的
頻道模式：
增強
商品名：
冷卻氮化鎵
打包：
捲軸
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
秋季時間：
13 ns
產品類別：
MOSFET
上升時間：
9 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
15 ns
典型的開啟延遲時間：
15 ns
第 # 部分別名：
SP001705420
Tags
IGL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
型號 製造商 描述 庫存 價格
IGLD60R070D1AUMA1
DISTI # V72:2272_22710689		Infineon Technologies AGIGLD60R070D1AUMA12918
  • 1000:$15.1500
  • 500:$15.6300
  • 250:$16.1200
  • 100:$16.6000
  • 50:$17.3700
  • 25:$18.9300
  • 10:$19.1900
  • 1:$21.3500
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1TR-ND		Infineon Technologies AGIC GAN FET 600V 60A 8SON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$15.1523
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1CT-ND		Infineon Technologies AGIC GAN FET 600V 60A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$17.0033
  • 100:$18.7282
  • 10:$21.9320
  • 1:$23.7800
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1DKR-ND		Infineon Technologies AGIC GAN FET 600V 60A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$17.0033
  • 100:$18.7282
  • 10:$21.9320
  • 1:$23.7800
IGLD60R070D1AUMA1
DISTI # 32436883		Infineon Technologies AGIGLD60R070D1AUMA12918
  • 1000:$15.1500
  • 500:$15.6300
  • 250:$16.1200
  • 100:$16.6000
  • 50:$17.3700
  • 25:$18.9300
  • 10:$19.1900
  • 1:$21.3500
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1		Infineon Technologies AGGAN HV - Tape and Reel (Alt: IGLD60R070D1AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    IGLD60R070D1AUMA1
    DISTI # SP001705420    		Infineon Technologies AGGAN HV (Alt: SP001705420)
    RoHS: Compliant
    Min Qty: 3000    		Europe - 0
    • 30000:€13.2900
    • 18000:€13.8900
    • 12000:€14.5900
    • 6000:€14.7900
    • 3000:€15.2900
    IGLD60R070D1AUMA1
    DISTI # 84AC1768    		Infineon Technologies AGMOSFET, N-CH, 600V, 15A, 150DEG C, 114W,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes167
    • 1000:$13.8200
    • 500:$15.8900
    • 250:$16.6900
    • 100:$17.4900
    • 50:$18.5300
    • 25:$19.5600
    • 10:$20.4800
    • 1:$22.2100
    IGLD60R070D1AUMA1
    DISTI # 726-IGLD60R070D1AUMA    		Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
    RoHS: Compliant    		158
    • 1:$21.9900
    • 5:$21.7600
    • 10:$20.2800
    • 25:$19.3700
    • 100:$17.3200
    • 250:$16.5200
    • 500:$15.7300
    • 1000:$13.6800
    IGLD60R070D1AUMA1
    DISTI # 2981535    		Infineon Technologies AGMOSFET, N-CH, 600V, 15A, 150DEG C, 114W
    RoHS: Compliant    		167
    • 3000:$22.8000
    • 500:$25.2600
    • 100:$26.1000
    • 50:$28.4700
    • 1:$31.3200
    • 10:$31.3200
    IGLD60R070D1AUMA1
    DISTI # 2981535    		Infineon Technologies AGMOSFET, N-CH, 600V, 15A, 150DEG C, 114W147
    • 100:£12.5600
    • 50:£13.3000
    • 10:£14.0400
    • 5:£15.7700
    • 1:£15.9400
    圖片 型號 描述
    STL3N65M2

    Mfr.#: STL3N65M2

    OMO.#: OMO-STL3N65M2

    		 MOSFET N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package
    GS61004B-E01-MR

    Mfr.#: GS61004B-E01-MR

    OMO.#: OMO-GS61004B-E01-MR

    		 MOSFET 100V 45A E-Mode GaN
    GS66502B-E01-MR

    Mfr.#: GS66502B-E01-MR

    OMO.#: OMO-GS66502B-E01-MR

    		 MOSFET 650V Enhancement Mode Transistor
    LMG1020YFFT

    Mfr.#: LMG1020YFFT

    OMO.#: OMO-LMG1020YFFT

    		 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
    CRD-5FF0912P

    Mfr.#: CRD-5FF0912P

    OMO.#: OMO-CRD-5FF0912P

    		 Power Management IC Development Tools Gate Driver Evaluation Board
    STL20N6F7

    Mfr.#: STL20N6F7

    OMO.#: OMO-STL20N6F7

    		 MOSFET N-channel 60 V, 0.0046 Ohm typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package
    LMG1020YFFR

    Mfr.#: LMG1020YFFR

    OMO.#: OMO-LMG1020YFFR

    		 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
    LMG1020YFFT

    Mfr.#: LMG1020YFFT

    OMO.#: OMO-LMG1020YFFT-TEXAS-INSTRUMENTS

    		 LMG1020YFFR BEARCAT 6-PIN WCSP
    GS66502B-E01-MR

    Mfr.#: GS66502B-E01-MR

    OMO.#: OMO-GS66502B-E01-MR-1190

    		 MOSFET 650V Enhancement Mode Transisto
    STL20N6F7

    Mfr.#: STL20N6F7

    OMO.#: OMO-STL20N6F7-STMICROELECTRONICS

    		 MOSFET N-CH 60V 100A
    可用性
    庫存:
    149
    訂購:
    2132
    輸入數量:
    IGLD60R070D1AUMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$21.99
    US$21.99
    5
    US$21.76
    US$108.80
    10
    US$20.28
    US$202.80
    25
    US$19.37
    US$484.25
    100
    US$17.32
    US$1 732.00
    250
    US$16.52
    US$4 130.00
    500
    US$15.73
    US$7 865.00
    1000
    US$13.68
    US$13 680.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
    從...開始
    最新產品
    More Newest Products
    Top