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IRF8915PBF

IRF8915PBF
Mfr. #:
IRF8915PBF
製造商:
Rochester Electronics, LLC
描述:
IGBT Transistors MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC
生命週期:
製造商新產品
數據表:
IRF8915PBF 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商
國際整流器
產品分類
晶體管 - FET、MOSFET - 單
打包
管子
單位重量
0.019048 oz
安裝方式
貼片/貼片
包裝盒
SOIC-8
技術
矽
通道數
2 Channel
配置
雙雙漏
晶體管型
2 N-Channel
鈀功耗
2 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
3.6 ns
上升時間
12 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
8.9 A
Vds-漏-源-擊穿電壓
20 V
VGS-th-Gate-Source-Threshold-Voltage
1.7 V to 2.5 V
Rds-On-Drain-Source-Resistance
27 mOhms
晶體管極性
N通道
典型關斷延遲時間
7.1 ns
典型開啟延遲時間
6 ns
Qg-門電荷
4.9 nC
正向跨導最小值
12 S
通道模式
增強
Tags
IRF8915, IRF891, IRF89, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-CH 20V 8.9A 8-Pin SOIC Tube
***ernational Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):18.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ure Electronics
Dual N-Channel 20 V 18.3/11.3 mOhm 11/23 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET
***ment14 APAC
N CHANNEL MOSFET, 20V, 10A; Transistor P; N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.55V; No. of Pins:8
***(Formerly Allied Electronics)
IRF7401PBF N-channel MOSFET Transistor; 8.7 A; 20 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 20 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC
***nell
N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg
***roFlash
Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***ure Electronics
Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET
***ark
Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes
***et Japan
Transistor MOSFET Array Dual N-CH 20V 7.63A 8-Pin SOIC T/R
***ure Electronics
Dual N-Channel 20 V 28/41 mO 15.6 nC SMT Enhancement Mode Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 20V 7.63A Automotive 8-Pin SO T/R
***(Formerly Allied Electronics)
Dual N-Channel Enhancement MOSFET SOIC8
***des Inc SCT
N-Channel Mosfet, 20V VDS, 12±V VGS
***peria
PSMN010-25YLC - N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology
***et
Transistor MOSFET N-Channel 25V 39A 4-Pin LFPAK
*** Electronics
MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET
***el Electronic
Interface - Drivers, Receivers, Transceivers 2 (1 Year) 8-SOIC (0.154, 3.90mm Width) Tape & Reel (TR) Transceiver Surface Mount 4.75V~5.25V 2/1 1Mbps CAN TRANSCEIVER
***peria
PSMN012-25YLC - N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology
***et
Trans MOSFET N-CH 25V 33A 5-Pin(4+Tab) LFPAK T/R
*** Electronics
MOSFET N-CH 25 V 12.6 MOHMS LOGIC LEVEL MOSFET
型號 製造商 描述 庫存 價格
IRF8915TRPBF
DISTI # IRF8915PBFCT-ND		Infineon Technologies AGMOSFET 2N-CH 20V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7769In Stock
  • 1000:$0.3740
  • 500:$0.4675
  • 100:$0.6311
  • 10:$0.8180
  • 1:$0.9300
IRF8915TRPBF
DISTI # IRF8915PBFDKR-ND		Infineon Technologies AGMOSFET 2N-CH 20V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7769In Stock
  • 1000:$0.3740
  • 500:$0.4675
  • 100:$0.6311
  • 10:$0.8180
  • 1:$0.9300
IRF8915TRPBF
DISTI # IRF8915PBFTR-ND		Infineon Technologies AGMOSFET 2N-CH 20V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.3291
IRF8915PBF
DISTI # 70018279		Infineon Technologies AGIRF8915PBF Dual N-channel MOSFET Transistor,8.9 A,20 V,8-Pin SOIC
RoHS: Compliant		0
  • 3800:$1.0900
  • 7600:$1.0680
  • 19000:$1.0360
  • 38000:$0.9920
  • 95000:$0.9270
IRF8915PBF
DISTI # 942-IRF8915PBF		Infineon Technologies AGMOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC
RoHS: Compliant		2570
  • 1:$1.0900
  • 10:$0.4830
  • 100:$0.3700
  • 1000:$0.3490
  • 2500:$0.3130
  • 10000:$0.3010
  • 25000:$0.2870
IRF8915PBFInternational Rectifier 
RoHS: Not Compliant		355
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3400
  • 1:$0.3600
圖片 型號 描述
IRF8910TRPBF

Mfr.#: IRF8910TRPBF

OMO.#: OMO-IRF8910TRPBF

 MOSFET MOSFT DUAL NCh 20V 10A
IRF8910TRPBF

Mfr.#: IRF8910TRPBF

OMO.#: OMO-IRF8910TRPBF-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 20V 10A 8-SOIC
IRF8915TRPBF-CUT TAPE

Mfr.#: IRF8915TRPBF-CUT TAPE

OMO.#: OMO-IRF8915TRPBF-CUT-TAPE-1190

 全新原裝
IRF8915UTRPBF

Mfr.#: IRF8915UTRPBF

OMO.#: OMO-IRF8915UTRPBF-1190

 全新原裝
IRF8910

Mfr.#: IRF8910

OMO.#: OMO-IRF8910-1190

 INSTOCK
IRF8910PBF-1

Mfr.#: IRF8910PBF-1

OMO.#: OMO-IRF8910PBF-1-1190

 全新原裝
IRF8910TR

Mfr.#: IRF8910TR

OMO.#: OMO-IRF8910TR-1190

 全新原裝
IRF8910TRPBF.

Mfr.#: IRF8910TRPBF.

OMO.#: OMO-IRF8910TRPBF--1190

 TRENCH_MOSFETS , ROHS COMPLIANT: YES
IRF8915PBFCT-ND

Mfr.#: IRF8915PBFCT-ND

OMO.#: OMO-IRF8915PBFCT-ND-1190

 全新原裝
IRF8915TRPBF

Mfr.#: IRF8915TRPBF

OMO.#: OMO-IRF8915TRPBF-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 20V 8.9A 8-SOIC
可用性
庫存:
Available
訂購:
4500
輸入數量:
IRF8915PBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.43
US$0.43
10
US$0.41
US$4.09
100
US$0.39
US$38.75
500
US$0.37
US$182.95
1000
US$0.34
US$344.40
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