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FQP7N80C

FQP7N80C
Mfr. #:
FQP7N80C
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 800V N-Ch Q-FET advance C-Series
生命週期:
製造商新產品
數據表:
FQP7N80C 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
800 V
Id - 連續漏極電流：
6.6 A
Rds On - 漏源電阻：
1.9 Ohms
Vgs - 柵源電壓：
30 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
167 W
配置：
單身的
頻道模式：
增強
商品名：
場效應管
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FQP7N80C
晶體管類型：
1 N-Channel
類型：
MOSFET
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
5.5 S
秋季時間：
60 ns
產品類別：
MOSFET
上升時間：
100 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
50 ns
典型的開啟延遲時間：
35 ns
第 # 部分別名：
FQP7N80C_NL
單位重量：
0.063493 oz
Tags
FQP7N80C, FQP7N8, FQP7N, FQP7, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 6.6 A, 800 V, 3-Pin TO-220AB ON Semiconductor FQP7N80C
***Semiconductor
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220
***p One Stop Japan
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 800 V 1.9 Ohm Flange Mount Mosfet - TO-220-3
***i-Key
MOSFET N-CH 800V 6.6A TO-220
***ark
Qfc 800V 1.9Ohm To220 Rohs Compliant: Yes
***ser
MOSFETs 800V N-Ch Q-FET advance C-Series
***inecomponents.com
800V N-Channel Advance QFET® C-Series
***eco
3 LEAD PLASTIC W/EXPOSED HEATSNK
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:6.6A; Resistance, Rds On:1.57ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:26.4A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:167W; Power, Pd:167W; Resistance, Rds on Max:1.9ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V; Width, External:10.67mm
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:167W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.6A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.9ohm; Package / Case:TO-220; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:26.4A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
型號 製造商 描述 庫存 價格
FQP7N80C
DISTI # V36:1790_06359748		ON SemiconductorQFC 800V 1.9OHM TO2208600
  • 5000:$0.7437
  • 2000:$0.7846
  • 1000:$0.8719
  • 500:$1.0713
  • 100:$1.2929
  • 10:$1.5492
  • 1:$1.7748
FQP7N80C
DISTI # FQP7N80C-ND		ON SemiconductorMOSFET N-CH 800V 6.6A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		389In Stock
  • 1000:$1.2106
  • 500:$1.4611
  • 100:$1.8785
  • 10:$2.3380
  • 1:$2.5900
FQP7N80C
DISTI # 30333733		ON SemiconductorQFC 800V 1.9OHM TO2208600
  • 2000:$0.7846
  • 1000:$0.8719
  • 500:$1.0713
  • 100:$1.2929
  • 10:$1.5492
  • 8:$1.7748
FQP7N80C
DISTI # FQP7N80C		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 525
  • 1000:$0.9039
  • 2000:$0.8799
  • 4000:$0.8569
  • 6000:$0.8349
  • 10000:$0.8139
FQP7N80C
DISTI # FQP7N80C		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1		Europe - 500
  • 1:€1.4339
  • 10:€1.1729
  • 25:€1.0029
  • 50:€0.9099
  • 100:€0.8959
  • 500:€0.8819
  • 1000:€0.8689
FQP7N80C
DISTI # FQP7N80C		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1000		Asia - 5000
  • 1000:$0.9900
  • 2000:$0.9519
  • 3000:$0.9167
  • 5000:$0.8839
  • 10000:$0.8535
  • 25000:$0.8250
  • 50000:$0.8115
FQP7N80C
DISTI # 97K0195		ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:6.6A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.57ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:167W RoHS Compliant: Yes354
  • 1:$2.3700
  • 10:$2.0200
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.2000
  • 2500:$1.1200
  • 5000:$1.0900
FQP7N80C.
DISTI # 29AC6380		Fairchild Semiconductor CorporationQFC 800V 1.9OHM TO220 ROHS COMPLIANT: YES525
  • 1:$2.3700
  • 10:$2.0200
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.2000
  • 2500:$1.1200
  • 5000:$1.0900
FQP7N80C
DISTI # 512-FQP7N80C		ON SemiconductorMOSFET 800V N-Ch Q-FET advance C-Series
RoHS: Compliant		260
  • 1:$2.2300
  • 10:$1.8900
  • 100:$1.5100
  • 500:$1.3200
  • 1000:$1.1000
FQP7N80CFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		11110
  • 1000:$1.1700
  • 500:$1.2300
  • 100:$1.2800
  • 25:$1.3400
  • 1:$1.4400
FQP7N80CFairchild Semiconductor Corporation 100
    FQP7N80C
    DISTI # 6715180P    		ON SemiconductorMOSFET N-CHANNEL 800V 6.6A TO220AB, TU1269
    • 50:£1.4260
    • 100:£1.3700
    FQP7N80C
    DISTI # 6715180    		ON SemiconductorMOSFET N-CHANNEL 800V 6.6A TO220AB, PK75
    • 5:£1.4860
    • 50:£1.4260
    • 100:£1.3700
    FQP7N80CFairchild Semiconductor Corporation6.6A, 800V, 1.9OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB49
      FQP7N80C
      DISTI # 1095073      		ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant      		354
      • 1:$3.5300
      • 10:$3.0000
      • 100:$2.4000
      • 500:$2.0900
      • 1000:$1.7500
      • 2000:$1.6200
      • 5000:$1.5700
      • 10000:$1.5100
      FQP7N80C
      DISTI # C1S541901511605      		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		8600
      • 1000:$0.8717
      • 500:$1.0330
      • 100:$1.2926
      • 10:$1.5603
      FQP7N80C
      DISTI # 1095073      		ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant      		358
      • 1:£1.5900
      • 10:£1.2200
      • 100:£0.9440
      • 250:£0.8850
      • 500:£0.8250
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      可用性
      庫存:
      Available
      訂購:
      1984
      輸入數量:
      FQP7N80C的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$2.23
      US$2.23
      10
      US$1.89
      US$18.90
      100
      US$1.51
      US$151.00
      500
      US$1.32
      US$660.00
      1000
      US$1.10
      US$1 100.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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