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STU8N80K5

STU8N80K5
Mfr. #:
STU8N80K5
製造商:
STMicroelectronics
描述:
MOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected
生命週期:
製造商新產品
數據表:
STU8N80K5 數據表
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更多信息:
STU8N80K5 更多信息 STU8N80K5 Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-251-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
800 V
Id - 連續漏極電流：
6 A
Rds On - 漏源電阻：
950 mOhms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
16.5 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
110 W
配置：
單身的
頻道模式：
增強
商品名：
超級網狀
打包：
管子
系列：
STU8N80K5
晶體管類型：
1 N-Channel
品牌：
意法半導體
秋季時間：
20 ns
產品類別：
MOSFET
上升時間：
14 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
32 ns
典型的開啟延遲時間：
12 ns
單位重量：
0.139332 oz
Tags
STU8N, STU8, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in IPAK package
***ure Electronics
N-Channel 800 V 6 A 950 mOhm Through Hole SuperMESH™ 5 Power Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 6A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 800 V, 0.95 Ohm typ., 6 A MDmesh K5 Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 6A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***enic
800V 6A 950m´Î@10V3A 110W 4V@100uA 1pF@100V N Channel 360pF@100V 13.4nC@0~10V -55¡Í~+150¡Í@(Tj) TO-251-3(IPAK) MOSFETs ROHS
***ical
Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube
***ronik
N-CH 800V 5,7A 950mOhm TO251-3
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***ineon SCT
800V CoolMOS™ CE is Infineon’s high performance device family offering 800 volts break down voltage, PG-TO251-3, RoHS
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package
***ark
Power Mosfet, N Channel, 7 A, 650 V, 0.6 Ohm, 10 V, 3 V Rohs Compliant: Yes
*** Electronics
STMICROELECTRONICS STU11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
***ical
Trans MOSFET N-CH 700V 7.4A 3-Pin(3+Tab) TO-251 Tube
***ark
Mosfet, N-Ch, 700V, 7.4A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:7.4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MDmesh K5 Power MOSFETs
STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies and welding. The K5 series are available at 800V, 850V, 900V, 950V, 1050V, 1200V and 1500V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics SuperMESH High Voltage MOSFETs - Thru-Hole
型號 製造商 描述 庫存 價格
STU8N80K5
DISTI # 497-13658-5-ND		STMicroelectronicsMOSFET N CH 800V 6A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		28In Stock
  • 2550:$1.8060
  • 525:$2.2485
  • 150:$2.6413
  • 75:$3.0476
  • 10:$3.2240
  • 1:$3.5900
STU8N80K5
DISTI # STU8N80K5		STMicroelectronicsTrans MOSFET N-CH 800V 6A 3-Pin TO-251 Tube - Rail/Tube (Alt: STU8N80K5)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 18000:$1.5900
  • 30000:$1.5900
  • 12000:$1.6900
  • 6000:$1.7900
  • 3000:$1.8900
STU8N80K5
DISTI # 89W1525		STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$1.6800
  • 250:$1.7300
  • 100:$2.0700
  • 50:$2.3900
  • 25:$2.5500
  • 10:$2.9100
  • 1:$3.3600
STU8N80K5
DISTI # 511-STU8N80K5		STMicroelectronicsMOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected
RoHS: Compliant		0
  • 1:$3.4200
  • 10:$2.9100
  • 100:$2.5200
  • 250:$2.3900
  • 500:$2.1500
  • 1000:$1.8100
  • 3000:$1.7200
STU8N80K5
DISTI # 7917958P		STMicroelectronicsPOWER MOSFET N CH SUPERMESH 5 800V 6A, TU2800
  • 25:£0.6380
STU8N80K5
DISTI # 7917958		STMicroelectronicsPOWER MOSFET N CH SUPERMESH 5 800V 6A, PK200
  • 25:£0.6380
  • 5:£0.6540
圖片 型號 描述
STRVS185X02B

Mfr.#: STRVS185X02B

OMO.#: OMO-STRVS185X02B

 TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 185V Ipp 2A
STRVS280X02F

Mfr.#: STRVS280X02F

OMO.#: OMO-STRVS280X02F

 TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
STRVS185X02B

Mfr.#: STRVS185X02B

OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS

 TVS DIODE 128V 185V SMB
STRVS280X02F

Mfr.#: STRVS280X02F

OMO.#: OMO-STRVS280X02F-STMICROELECTRONICS

 TVS Diodes - Transient Voltage Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
可用性
庫存:
Available
訂購:
1000
輸入數量:
STU8N80K5的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$3.42
US$3.42
10
US$2.91
US$29.10
100
US$2.52
US$252.00
250
US$2.39
US$597.50
500
US$2.15
US$1 075.00
1000
US$1.81
US$1 810.00
3000
US$1.72
US$5 160.00
6000
US$1.66
US$9 960.00
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