SI7137DP-T1-GE3

Mfr. #:: SI7137DP-T1-GE3
製造商:: Vishay / Siliconix
描述:: MOSFET -20V Vds 12V Vgs PowerPAK SO-8
生命週期:: 製造商新產品
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ECAD Model:
更多信息:: SI7137DP-T1-GE3 更多信息

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: E

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: PowerPAK-SO-8

通道數：: 1 Channel

晶體管極性：: P-通道

Vds - 漏源擊穿電壓：: 20 V

Id - 連續漏極電流：: 60 A

Rds On - 漏源電阻：: 1.6 mOhms

Vgs th - 柵源閾值電壓：: 1.4 V

Vgs - 柵源電壓：: 12 V

Qg - 門電荷：: 585 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 104 W

配置：: 單身的

頻道模式：: 增強

商品名：: 溝槽場效應晶體管

打包：: 捲軸

系列：: SI7

晶體管類型：: 1 P-Channel

品牌：: 威世 / Siliconix

正向跨導 - 最小值：: 95 S

秋季時間：: 72 ns

產品類別：: MOSFET

上升時間：: 14 ns

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 230 ns

典型的開啟延遲時間：: 20 ns

第 # 部分別名：: SI7137DP-GE3

單位重量：: 0.017870 oz

Tags: SI7137DP-T1, SI7137DP-T, SI7137DP, SI7137D, SI7137, SI713, SI71, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7137DP-T1-GE3 評級和評論

T***n

wow.. it amazing product. spark gap about 2cm..!i use to make this,1* 400kv boost module 1* 18650 baterry 1* 18650 usb charging circuit1* led and 220ohm resister.2* screw nuts2* switches 1* 25cm long pvc pipe and end caps works pritty well. not deathly, but it hurts. try you guys..!!

2019-01-15

A***v

The parcel was a national team. It came all that ordered. Went almost a week for this minus star. I will check in the case i will add a review, or even with these details that is still a lottery.

2019-05-13

SI7137DP-T1-GE3 描述

***ure Electronics: Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8

***ark: MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V ;RoHS Compliant: Yes

***nell: MOSFET, P CH, -20V, -60A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-

*** Source Electronics: Trans MOSFET N-CH 20V 60A 8-Pin PowerPAK SO T/R / MOSFET N-CH 20V 60A PPAK SO-8

***ure Electronics: Single N-Channel 20 V 0.00225 Ohm 97 nC 6.25 W Silicon SMT Mosfet POWERPAK-SO-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:45.6A; On Resistance Rds(On):0.0013Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes

***ure Electronics: 20V, 50A, 2.3mohm, TrenchFET® power MOSFET, N-Channel, PowerPAK SO-8

***ical: Trans MOSFET N-CH 20V 35.4A 8-Pin PowerPAK SO EP T/R

***enic: 20V 50A 2.3m´Î@10V15A 5.2W 1.5V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS

***ment14 APAC: MOSFET,N CH,DIODE,20V,50A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1900µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35.4A; Power Dissipation Pd:5.2W; Voltage Vgs Max:12V

***hard Electronics: VISHAY SIR401DP-T1-GE3 MOSFET Transistor, P Channel, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV

***roFlash: MOSFET, P-CH, 30V, PPAK-SO8; Transistor Polarity: P Channel; Continuous Drain Cur

***nell: MOSFET, P-CH, -20V, PPAK-SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***Yang: Transistor: N-MOSFET, unipolar, 20V, 50A, 0.009ohm, 44W, -55+175 deg.C, SMD, TO252(DPAK)

***emi: N-Channel PowerTrench® MOSFET, 20V, 50A, 9mΩ

***ure Electronics: N-Channel 20 V 8 mOhm Surface Mount PowerTrench Mosfet - DPAK (TO-252)

***r Electronics: Power Field-Effect Transistor, 14.7A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 20V, 50A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

***ure Electronics: Single N-Channel 20 V 3.5 mOhm 52 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, 20V, 40A, 2.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3

***Yang: Trans MOSFET N-CH 20V 26A 8-Pin PQFN EP T/R - Tape and Reel

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 37 W

***ark: MOSFET,N CH,DIODE,20V,26A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On State Resistance:0.002ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:12V; Operating Temperature Range:-55°C to +150°C; Transistor ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side

***emi: N-Channel PowerTrench® SyncFET™ MOSFET, 25V, 90A, 1.5mΩ

***ure Electronics: Single N-Channel 25 V 2.5 W 81 nC Silicon Surface Mount Mosfet - POWER 56-8

***r Electronics: Power Field-Effect Transistor, 38A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel SyncFET™ is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

SI7137DP-T1-GE3 更多信息

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

型號	製造商	描述	庫存	價格
SI7137DP-T1-GE3 DISTI # V72:2272_09215622	Vishay Intertechnologies	Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R RoHS: Compliant	1471	1000:$1.1500 500:$1.1905 250:$1.3289 100:$1.3320 25:$1.6219 10:$1.6276 1:$1.8717
SI7137DP-T1-GE3 DISTI # SI7137DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	634In Stock	1000:$1.2198 500:$1.4722 100:$1.8928 10:$2.3560 1:$2.6100
SI7137DP-T1-GE3 DISTI # SI7137DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	634In Stock	1000:$1.2198 500:$1.4722 100:$1.8928 10:$2.3560 1:$2.6100
SI7137DP-T1-GE3 DISTI # SI7137DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$1.1026
SI7137DP-T1-GE3 DISTI # 27105003	Vishay Intertechnologies	Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R RoHS: Compliant	1471	1000:$1.1500 500:$1.1905 250:$1.3289 100:$1.3320 25:$1.6219 10:$1.6276 7:$1.8717
SI7137DP-T1-GE3 DISTI # SI7137DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7137DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.2900 6000:$1.1900 12000:$1.1900 18000:$1.1900 30000:$1.0900
SI7137DP-T1-GE3 DISTI # 63R6005	Vishay Intertechnologies	Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 63R6005) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$2.7700 25:$2.3000 50:$2.0500 100:$1.7900 250:$1.6800 500:$1.5600 1000:$1.5000
SI7137DP-T1-GE3	Vishay Intertechnologies	Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant	9000Reel	3000:$1.6500
SI7137DP-T1-GE3 DISTI # 781-SI7137DP-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant	28226	1:$2.3100 10:$1.9200 100:$1.4900 500:$1.3000 1000:$1.2600 3000:$1.2400
SI7137DP-T1-GE3 DISTI # 2335354	Vishay Intertechnologies	MOSFET, P CH, -20V, -60A, POWERPAK SO RoHS: Compliant	5724	1:£1.7700 10:£1.4700 100:£1.1500 250:£1.0800 500:£1.0100
SI7137DP-T1-GE3 DISTI # C1S804000723516	Vishay Intertechnologies	MOSFETs RoHS: Compliant	1471	250:$1.3258 100:$1.3289 25:$1.6162 10:$1.6219
SI7137DP-T1-GE3 DISTI # 2335354	Vishay Intertechnologies	MOSFET, P CH, -20V, -60A, POWERPAK SO RoHS: Compliant	4374	1:$3.6600 10:$3.0400 100:$2.3700 500:$2.0600 1000:$1.9800 3000:$1.9700
SI7137DP-T1-GE3 DISTI # XSFP00000063506	Vishay Siliconix	RoHS: Compliant	10095	3000:$3.3000 10095:$3.0000
SI7137DP-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant	Americas - 9000	3000:$0.9980 6000:$0.9620 12000:$0.9250

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