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FDU6680

FDU6680
Mfr. #:
FDU6680
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 30V N-Channel PowerTrench
生命週期:
製造商新產品
數據表:
FDU6680 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
E
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
46 A
Rds On - 漏源電阻：
10 mOhms
Vgs - 柵源電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
3.3 W
配置：
單身的
頻道模式：
增強
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
晶體管類型：
1 N-Channel
類型：
MOSFET
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
47 S
秋季時間：
12 ns
產品類別：
MOSFET
上升時間：
7 ns
出廠包裝數量：
75
子類別：
MOSFET
典型關斷延遲時間：
29 ns
典型的開啟延遲時間：
10 ns
第 # 部分別名：
FDU6680_NL
單位重量：
0.139332 oz
Tags
FDU6680, FDU668, FDU66, FDU6, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
MOSFET 30V N-Channel PowerTrench - Bulk
***i-Key Marketplace
MOSFET N-CH 30V 12A/46A IPAK
***ter Electronics
30V, NCH , IPAK, TO-251, SINGLE
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 30V 14A I-PAK
***et
30V N-Channel PowerTrench MOSFET
***r Electronics
Power Field-Effect Transistor, 21A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***Yang
MOSFET 30V N-Ch PowerTrench Fast Switching - Bulk
***i-Key
MOSFET N-CH 30V 15A I-PAK
***r Electronics
Power Field-Effect Transistor, 21A I(D), 30V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***i-Key Marketplace
MOSFET N-CH 30V 15A/50A IPAK
***el Nordic
Contact for details
***ser
MOSFETs- Power and Small Signal NFET 30V 58A 9MOHM
***et
Trans MOSFET N-CH 25V 11.5A 3-Pin(3+Tab) IPAK Rail
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:58A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:52W ;RoHS Compliant: Yes
***emi
Power MOSFET 30V 54A 10 mOhm Single N-Channel DPAK
***ser
MOSFETs- Power and Small Signal NFET 30V 54A 10MOHM
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:54A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes
***ser
MOSFETs 30V,58A,10 OHM, NCH PWR TRENCH MOSFET
***Yang
MOSFET N-CH 30V 58A I-PAK - Bulk
***i-Key Marketplace
MOSFET N-CH 30V 13A/58A IPAK
***S
new, original packaged
***el Nordic
Contact for details
***ser
MOSFETs- Power and Small Signal NFET 30V 63A 8MOHM
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:63A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:63A; Resistance, Rds On:0.008ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:54.6W; Voltage, Vds Max:30V
型號 製造商 描述 庫存 價格
FDU6680
DISTI # FDU6680-ND		ON SemiconductorMOSFET N-CH 30V 12A IPAK
RoHS: Compliant
Min Qty: 1800
Container: Tube		Limited Supply - Call
    FDU6680Fairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant    		82353
    • 1000:$0.5900
    • 500:$0.6200
    • 100:$0.6500
    • 25:$0.6800
    • 1:$0.7300
    FDU6680AFairchild Semiconductor CorporationPower Field-Effect Transistor, 14A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant    		9000
    • 1000:$0.7900
    • 500:$0.8300
    • 100:$0.8700
    • 25:$0.9000
    • 1:$0.9700
    FDU6680
    DISTI # 512-FDU6680    		ON SemiconductorMOSFET 30V N-Channel PowerTrench
    RoHS: Compliant    		0
      FDU6680A
      DISTI # 512-FDU6680A      		ON SemiconductorMOSFET 30V N-Ch PowerTrench
      RoHS: Compliant      		0
        FDU6680Fairchild Semiconductor Corporation12 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA2617
        • 2134:$0.3300
        • 477:$0.3750
        • 1:$1.2000
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        可用性
        庫存:
        Available
        訂購:
        5000
        輸入數量:
        FDU6680的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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