FCP21N60N

Mfr. #:: FCP21N60N
製造商:: Rochester Electronics, LLC
描述:: RF Bipolar Transistors MOSFET 600V, NCH MOSFET
生命週期:: 製造商新產品
數據表:: FCP21N60N 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: FCS

產品分類: 集成電路芯片

Tags: FCP2, FCP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCP21N60N 描述

***roFlash: Mosfet N-ch 600V TO220-3

***i-Key Marketplace: FCP21N60 - N-CHANNEL, MOSFET

***ical: MOSFET 600V, NCH MOSFET

***S: new, original packaged

***el Nordic: Contact for details

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.024Ohm;ID 31A;TO-220 Full-Pak;PD 45W;-55de

***ure Electronics: Single N-Channel 55 V 0.024 Ohm 65 nC HEXFET® Power Mosfet - TO-220-3FP

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 38 W

***et Europe: Trans MOSFET N-CH 55V 31A 3-Pin(3+Tab) TO-220 Full-Pak

*** Stop Electro: Power Field-Effect Transistor, 31A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 55V, 28A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:38W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 20A;TO-220 Full-Pak;PD 54W

***ure Electronics: Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-220-3FP

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

***ow.cn: Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220AB Full-Pak Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 42 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:20A; On-Resistance, Rds(on):52mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 FULLPAK RoHS Compliant: No

***nell: MOSFET, N, 100V, 18A, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:18A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:110A; No. of Pins:3; Power Dissipation:42W; Power, Pd:42W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.8°C/W; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:100V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 23A;TO-220 Full-Pak;PD 54W

***ure Electronics: Single N-Channel 100 V 0.053 Ohm 74 nC HEXFET® Power Mosfet - TO-220-3FP

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 42 W

***ow.cn: Trans MOSFET N-CH 100V 23A 3-Pin(3+Tab) TO-220AB Full-Pak Tube

***roFlash: Power Field-Effect Transistor, 23A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):44mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 FULLPAK ;RoHS Compliant: Yes

***th Star Micro: Transistor MOSFET N-CH 500V 4.6A 3-Pin (3+Tab) TO-220 Full-Pak

***ure Electronics: Single N-Channel 500 V 0.85 Ohms Flange Mount Power Mosfet - TO-220FP

***(Formerly Allied Electronics): Pwr MOSFET, 500V Single N-Ch. HEXFET; TO-220 FullPak (ISO)

*** Stop Electro: Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 500V, 4.6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:40W; Transistor Case Style:TO-220FP; No. of Pins:3; Current Id Max:4.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction to Case Thermal Resistance A:3.1°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:18A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220

***enic: 100V 28A 150W 77m´Î@5V17A 2V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***nell: MOSFET, N, LOGIC, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.077ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissip

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ure Electronics: Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220FP

***et: Trans MOSFET N-CH 200V 9.8A 3-Pin(3+Tab) TO-220 Full-Pak

***ark: N CHANNEL MOSFET, 200V, 9.8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No

Market price

型號	製造商	描述	庫存	價格
FCP21N60N DISTI # FCP21N60N	ON Semiconductor	600V, NCH MOSFET - Rail/Tube (Alt: FCP21N60N) RoHS: Compliant Container: Tube	Americas - 0
FCP21N60N DISTI # 512-FCP21N60N	ON Semiconductor	MOSFET 600V, NCH MOSFET RoHS: Compliant	0
FCP21N60N	Fairchild Semiconductor Corporation	RoHS: Not Compliant	20186	1000:$2.1100 500:$2.2200 100:$2.3100 25:$2.4100 1:$2.5900

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